SCHEMBL2220903

SCHEMBL2220903

[Hf+4].[Hf+4].[Hf+4].[N-3].[N-3].[N-3].[N-3].[N-3].[N-3].[N-3].[N-3].[Ti+4].[Ti+4].[Ti+4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17891766 0.87
SCHEMBL16241875 0.87
SCHEMBL7903268 0.82
SCHEMBL8201124 0.82
SCHEMBL7165058 0.82
SCHEMBL16594173 0.82
SCHEMBL16303 0.82
SCHEMBL2180089 0.82
SCHEMBL5041251 0.82
SCHEMBL80291 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 143 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230278868-A1 A CORAL-LIKE COMPOSITE MATERIAL AND A METHOD OF PREPARING THE SAME AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH (SG) 2023-09-07 US claimed
US-20220115516-A1 INTEGRATED DIPOLE FLOW FOR TRANSISTOR APPLIED MATERIALS, INC. (US) 2022-04-14 US claimed
CN-113924656-A Integrated bipolar flow for transistors 应用材料公司 2022-01-11 CN claimed
WO-2020242831-A1 INTEGRATED DIPOLE FLOW FOR TRANSISTOR APPLIED MATERIALS, INC. (US) 2020-12-03 WO claimed
US-20200373404-A1 INTEGRATED DIPOLE FLOW FOR TRANSISTOR APPLIED MATERIALS, INC. (US) 2020-11-26 US claimed
US-8415677-B2 Field-effect transistor device having a metal gate stack with an oxygen barrier layer INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-04-09 US claimed
US-20120326314-A1 LARGE-GRAIN, LOW-RESISTIVITY TUNGSTEN ON A CONDUCTIVE COMPOUND INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-12-27 US claimed
EP-2519976-A2 FIELD-EFFECT TRANSISTOR DEVICE HAVING A METAL GATE STACK WITH AN OXYGEN BARRIER LAYER International Business Machines Corporation (US) 2012-11-07 EP claimed
WO-2012121852-A1 LARGE-GRAIN, LOW-RESISTIVITY TUNGSTEN ON A CONDUCTIVE COMPOUND INTERNATIONAL BUSINESS MACHINES CORP. (US) 2012-09-13 WO claimed
US-20120228773-A1 LARGE-GRAIN, LOW-RESISTIVITY TUNGSTEN ON A CONDUCTIVE COMPOUND INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-09-13 US claimed
WO-2011090907-A2 FIELD-EFFECT TRANSISTOR DEVICE HAVING A METAL GATE STACK WITH AN OXYGEN BARRIER LAYER INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-07-28 WO claimed
US-20110175147-A1 FIELD-EFFECT TRANSISTOR DEVICE HAVING A METAL GATE STACK WITH AN OXYGEN BARRIER LAYER INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-07-21 US claimed
EP-2132154-A2 THERMO-OPTICALLY FUNCTIONAL COMPOSITIONS, SYSTEMS AND METHODS OF MAKING General Electric Company (US) 2009-12-16 EP claimed
WO-2008121441-A2 THERMO-OPTICALLY FUNCTIONAL COMPOSITIONS, SYSTEMS AND METHODS OF MAKING GENERAL ELECTRIC COMPANY (US) 2008-10-09 WO claimed
US-20080238289-A1 THERMO-OPTICALLY FUNCTIONAL COMPOSITIONS, SYSTEMS AND METHODS OF MAKING GENERAL ELECTRIC COMPANY (US) 2008-10-02 US claimed
CN-118139832-A Cubic boron nitride sintered body 住友电气工业株式会社 2024-06-04 CN disclosed
US-20240174576-A1 CUBIC BORON NITRIDE SINTERED MATERIAL SUMITOMO ELECTRIC INDUSTRIES, LTD. (JP) 2024-05-30 US disclosed
US-4839011-A Arc coating of refractory metal compounds REGENTS OF THE UNIVERSITY OF MINNESOTA (US) 1989-06-13 US disclosed
EP-0306491-A1 ARC COATING OF REFRACTORY METAL COMPOUNDS. UNIV MINNESOTA (US) 1989-03-15 EP disclosed
WO-1987005948-A1 ARC COATING OF REFRACTORY METAL COMPOUNDS REGENTS OF THE UNIVERSITY OF MINNESOTA (US) 1987-10-08 WO disclosed