SCHEMBL22238907

SCHEMBL22238907

CCOC(=O)C(C)(CC)Oc1ccc(C)cc1

nearest known ligand 0.68

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ OPRK1 P41145 1/20 0.68
▸ PPARA Q07869 4/20 0.54
▸ TSHR P16473 2/20 0.54
▸ ABCB11 O95342 1/20 0.54
▸ CYP1A2 P05177 1/20 0.54
▸ CYP3A4 P08684 1/20 0.54
▸ HTR2A P28223 1/20 0.54
▸ PMP22 Q01453 1/20 0.54
▸ FBP1 P09467 1/20 0.44
▸ ADORA3 P0DMS8 1/20 0.43
▸ MEN1 O00255 2/20 0.42
▸ KMT2A Q03164 2/20 0.42
▸ PPARG P37231 4/20 0.41
▸ ALDH1A1 P00352 2/20 0.40
▸ L3MBTL1 Q9Y468 1/20 0.40
▸ POLB P06746 1/20 0.39
▸ CNR2 P34972 1/20 0.39
▸ MAOB P27338 1/20 0.39
▸ LMNA P02545 1/20 0.39
▸ TRPM8 Q7Z2W7 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4874274 0.89 OPRK1 (0.66) OPRK1PPARATSHRABCB11CYP1A2
SCHEMBL14254639 0.87 OPRK1 (0.64) OPRK1PPARATSHRABCB11CYP1A2
SCHEMBL1935420 0.87 OPRK1 (0.86) OPRK1PPARATSHRABCB11CYP1A2
SCHEMBL11358611 0.87 OPRK1 (0.63) OPRK1PPARATSHRABCB11CYP1A2
SCHEMBL13355892 0.87 OPRK1 (0.52) OPRK1PPARATSHRABCB11CYP1A2
SCHEMBL6780080 0.84 OPRK1 (0.65) OPRK1PPARATSHRABCB11CYP1A2
SCHEMBL8935672 0.83 ADORA3 (0.60) OPRK1PPARATSHRABCB11CYP1A2
SCHEMBL3903999 0.83 PPARA (0.76) OPRK1PPARATSHRABCB11CYP1A2
SCHEMBL8935669 0.83 ADORA3 (0.60) OPRK1PPARATSHRABCB11CYP1A2
SCHEMBL5997445 0.82 OPRK1 (0.78) OPRK1PPARATSHRABCB11CYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2746853-B1 Pattern-forming method using electron beams or EUV rays and use of this method for forming a fine circuit of a semiconductor device FUJIFILM CORP (JP) 2020-07-22 — — EP disclosed
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