SCHEMBL2238617

SCHEMBL2238617

O[SiH3].[Cr]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL397781 0.87
SCHEMBL18357 0.87
SCHEMBL2554735 0.87
SCHEMBL8969621 0.87
SCHEMBL7880376 0.75
Ammonia Solution, Strong SCHEMBL992198 0.75
SCHEMBL5025861 0.75
SCHEMBL5407937 0.75
SCHEMBL3239793 0.75
SCHEMBL1657682 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0151737-B1 PROCESS FOR CONTROLLING AND MONITORING THE INCORPORATION OF A DOPING MATERIAL INTO CONDUCTIVE METALLIC LAYERS DURING THEIR MANUFACTURE SIEMENS AKTIENGESELLSCHAFT (DE) 1990-06-27 EP claimed
EP-0154696-B1 CONTROL AND REGULATING PROCESS FOR THE COMPOSITION AND THICKNESS OF METALLIC CONDUCTING ALLOY LAYERS DURING PRODUCTION SIEMENS AKTIENGESELLSCHAFT (DE) 1987-06-03 EP claimed
EP-0035351-B1 DEFORMABLE FLEXURE ELEMENT FOR STRAIN GAGE TRANSDUCER AND METHOD OF MANUFACTURE GOULD INC. (US) 1985-01-23 EP claimed
US-4414274-A Thin film electrical resistors and process of producing the same SIEMENS AKTIENGESELLSCHAFT (DE) 1983-11-08 US claimed
US-4325048-A Deformable flexure element for strain gage transducer and method of manufacture GOULD INC. (US) 1982-04-13 US claimed
EP-0035351-A2 Deformable flexure element for strain gage transducer and method of manufacture GOULD INC. (US) 1981-09-09 EP claimed
US-7999352-B2 Semiconductor device RICOH COMPANY, LTD. (JP) 2011-08-16 US disclosed
US-7550819-B2 Metal thin-film resistance element on an insulation film RICOH COMPANY, LTD. (JP) 2009-06-23 US disclosed
US-7425753-B2 Semiconductor device RICOH COMPANY, LTD. (JP) 2008-09-16 US disclosed
US-7358592-B2 Semiconductor device RICOH COMPANY, LTD. (JP) 2008-04-15 US disclosed
US-20060065949-A1 Semiconductor device RICOH COMPANY, LTD. (JP) 2006-03-30 US disclosed
US-20060027892-A1 Semiconductor device RICOH ELECTRONIC DEVICES CO., LTD. (JP) 2006-02-09 US disclosed
US-20050236676-A1 Semiconductor device NISSHINBO MICRO DEVICES INC. (JP) 2005-10-27 US disclosed
US-20050230833-A1 Semiconductor device RICOH COMPANY, LTD. (JP) 2005-10-20 US disclosed
US-20050202219-A1 Semiconductor device and fabrication process thereof NISSHINBO MICRO DEVICES INC. (JP) 2005-09-15 US disclosed
EP-0035351-B1 DEFORMABLE FLEXURE ELEMENT FOR STRAIN GAGE TRANSDUCER AND METHOD OF MANUFACTURE GOULD INC. (US) 1985-01-23 EP disclosed
US-4414274-A Thin film electrical resistors and process of producing the same SIEMENS AKTIENGESELLSCHAFT (DE) 1983-11-08 US disclosed
US-4414274-A Thin film electrical resistors and process of producing the same SIEMENS AKTIENGESELLSCHAFT (DE) 1983-11-08 US disclosed
US-4325048-A Deformable flexure element for strain gage transducer and method of manufacture GOULD INC. (US) 1982-04-13 US disclosed
EP-0035351-A2 Deformable flexure element for strain gage transducer and method of manufacture GOULD INC. (US) 1981-09-09 EP disclosed