SCHEMBL5407937

SCHEMBL5407937

O[SiH3].[Zr]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18357 0.87
SCHEMBL8969621 0.87
SCHEMBL397781 0.87
SCHEMBL2554735 0.87
SCHEMBL1657682 0.75
SCHEMBL3239793 0.75
SCHEMBL7880376 0.75
SCHEMBL5025861 0.75
Hydrochloric Acid SCHEMBL7202238 0.75
SCHEMBL2238617 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-106669795-B The preparation method of catalyst for hydro-upgrading 中国石油化工股份有限公司 2019-06-11 CN disclosed
CN-106669863-B The method of modifying of catalyst for hydro-upgrading carrier 中国石油化工股份有限公司 2019-06-11 CN disclosed
CN-105709788-B The preparation method of hydrotreating catalyst 中国石油化工股份有限公司 2018-11-06 CN disclosed
CN-105709849-B The preparation method of modified oxidized alumina-based support 中国石油化工股份有限公司 2018-04-10 CN disclosed
CN-106669863-A Modification method of hydro-upgrading catalyst carrier 中国石油化工股份有限公司 2017-05-17 CN disclosed
CN-106669795-A Preparation method of hydro-upgrading catalyst 中国石油化工股份有限公司 2017-05-17 CN disclosed
CN-105709788-A Preparation method of hydrogenation catalyst 中国石油化工股份有限公司 2016-06-29 CN disclosed
CN-105709849-A Preparation method of modified aluminium oxide-based carrier 中国石油化工股份有限公司 2016-06-29 CN disclosed
US-7297368-B2 Method of making carbon fiber-carbon matrix reinforced ceramic composites ULTRAMET (US) 2007-11-20 US disclosed
US-7193281-B2 Semiconductor device and process for producing the same RENESAS TECHNOLOGY CORP. (JP) 2007-03-20 US disclosed
US-7064400-B2 Semiconductor device and process for producing the same RENESAS TECHNOLOGY CORP. (JP) 2006-06-20 US disclosed
US-20060081949-A1 Semiconductor device and process for producing the same RENESAS ELECTRONICS CORPORATION (JP) 2006-04-20 US disclosed
US-20050104141-A1 Semiconductor device and process for producing the same YUGAMI JIRO (JP) 2005-05-19 US disclosed
US-6833296-B2 Method of making a MISFET semiconductor device having a high dielectric constant insulating film with tapered end portions RENESAS TECHNOLOGY CORP. (JP) 2004-12-21 US disclosed
US-20040207133-A1 Carbon-carbon reinforced melt infiltrated ceramic matrix composites ULTRAMET 2004-10-21 US disclosed
US-20040159889-A1 Semiconductor device and process for producing the same RENESAS ELECTRONICS CORPORATION (JP) 2004-08-19 US disclosed
US-6710383-B2 MISFET semiconductor device having a high dielectric constant insulating film with tapered end portions RENESAS TECHNOLOGY CORPORATION (JP) 2004-03-23 US disclosed
US-20020072180-A1 Semiconductor device and process for producing the same RENESAS ELECTRONICS CORPORATION (JP) 2002-06-13 US disclosed