Propylene Glycol

Propylene Glycol

SCHEMBL22499994

CC(O)CO.CCCCCCOC

nearest known ligand 0.52

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

SLC5A2

The experimentally established mechanism targets of Propylene Glycol. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
▸ USP2 O75604 1/20 0.52
▸ TDP1 Q9NUW8 1/20 0.43
▸ HTT P42858 2/20 0.43
▸ MAPT P10636 2/20 0.43
▸ MEN1 O00255 1/20 0.43
▸ THRB P10828 1/20 0.43
▸ KMT2A Q03164 1/20 0.43
▸ LPAR3 Q9UBY5 3/20 0.42
▸ LPAR1 Q92633 2/20 0.42
▸ LPAR2 Q9HBW0 2/20 0.42
▸ SPHK1 Q9NYA1 2/20 0.42
▸ LMNA P02545 2/20 0.41
▸ LPAR5 Q9H1C0 1/20 0.40
▸ GMNN O75496 1/20 0.39
▸ POLB P06746 1/20 0.39
▸ CYP2D6 P10635 1/20 0.39
▸ THPO P40225 1/20 0.39
▸ MTOR P42345 1/20 0.39
▸ BLM P54132 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Propylene Glycol SCHEMBL27801478 1.00 USP2 (0.52) USP2TDP1HTTMAPTMEN1
Propylene Glycol SCHEMBL23159833 0.98 USP2 (0.48) USP2TDP1HTTMAPTMEN1
Propylene Glycol SCHEMBL210725 0.91 TDP1 (0.48) USP2TDP1HTTMAPTSPHK1
Glycerin SCHEMBL28681270 0.87 USP2 (0.62) USP2HTTMAPTMEN1THRB
Propylene Glycol SCHEMBL706277 0.84 USP2 (0.64) USP2TDP1HTTMAPTMEN1
Propylene Glycol SCHEMBL8641217 0.84 USP2 (0.64) USP2TDP1HTTMAPTMEN1
Propylene Glycol SCHEMBL9070382 0.84 USP2 (0.64) USP2TDP1HTTMAPTMEN1
Propylene Glycol SCHEMBL3181225 0.84 USP2 (0.64) USP2TDP1HTTMAPTMEN1
Propylene Glycol SCHEMBL8644290 0.84 USP2 (0.64) USP2TDP1HTTMAPTMEN1
Propylene Glycol SCHEMBL2485076 0.84 USP2 (0.64) USP2TDP1HTTMAPTMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 59 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2020203818-A1 ASBESTOS DETECTING AGENT, ASBESTOS DETECTING KIT, AND ASBESTOS DETECTING METHOD 広島県 2020-10-08 — — WO disclosed
CN-104835724-B Form the composition and method of p-diffusion layer, and the method for preparing photovoltaic cell 日立化成工业株式会社 2019-01-04 — — CN disclosed
CN-108572516-A positive photosensitive resin composition, display device and pattern forming method thP 株式会社东进世美肯 2018-09-25 — — CN disclosed
CN-105047545-B The manufacturing method of solar cell 日立化成株式会社 2018-06-15 — — CN disclosed
CN-103718309-B Semiconductor substrate, method for manufacturing same, solar cell element, and solar cell 日立化成株式会社 2018-05-18 — — CN disclosed
CN-104137227-B N-type diffusion layer forms with composition, has the manufacturing method of semiconductor substrate of n-type diffusion layer and the manufacturing method of solar cell device 日立化成株式会社 2018-05-18 — — CN disclosed
CN-104835723-B Form the composition and method of p-diffusion layer, and the method for preparing photovoltaic cell 日立化成工业株式会社 2018-04-10 — — CN disclosed
CN-105977143-B Form the composition and method of p-diffusion layer, and the method for preparing photovoltaic cell 日立化成工业株式会社 2018-03-30 — — CN disclosed
CN-104040701-B Semiconductor substrate with passivation film and method for manufacturing same, and solar cell element and method for manufacturing same 日立化成株式会社 2018-01-26 — — CN disclosed
CN-104488069-B Composition for forming passivation layer, semiconductor substrate with passivation layer, method for manufacturing semiconductor substrate with passivation layer, solar cell element, method for manufacturing solar cell element, and solar cell 日立化成株式会社 2018-01-19 — — CN disclosed
CN-104471717-A Composition for forming passivation layer, semiconductor substrate having passivation layer, production method for semiconductor substrate having passivation layer, solar cell element, production method for solar cell element, and solar cell HITACHI CHEMICAL CO LTD 2015-03-25 — — CN disclosed
CN-104428901-A Solar-cell element and method for manufacturing same HITACHI CHEMICAL CO LTD 2015-03-18 — — CN disclosed
CN-104319296-A Mask forming composition, production method for solar cell substrate, and production method for solar cell element HITACHI CHEMICAL CO LTD 2015-01-28 — — CN disclosed
CN-103839787-A Composition for forming n-type diffusion layer, method for producing n-type diffusion layer, and method for producing solar cell element HITACHI CHEMICAL CO LTD 2014-06-04 — — CN disclosed
CN-103794478-A Composition that forms n-type diffusion layer, n-type diffusion layer manufacturing method and solar cell element manufacturing method HITACHI CHEMICAL CO LTD 2014-05-14 — — CN disclosed
CN-103688367-A Solar-cell substrate, method for manufacturing solar-cell substrate, solar-cell element, and solar cell HITACHI CHEMICAL CO LTD 2014-03-26 — — CN disclosed
CN-103688341-A Composition for forming n-type diffusion layer, method for producing n-type diffusion layer, and method for producing solar cell element HITACHI CHEMICAL CO LTD 2014-03-26 — — CN disclosed
CN-103650111-A Composition for forming n-type diffusion layer, method for producing n-type diffusion layer, and method for producing solar cell element HITACHI CHEMICAL CO LTD 2014-03-19 — — CN disclosed
CN-101646718-B Curable resin composition, protective film, and method for forming protective film JSR CORP JP 2013-04-03 — — CN disclosed
CN-101646718-A The formation method of curable resin composition, protective membrane and protective membrane JSR CORP JP 2010-02-10 — — CN disclosed
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