SCHEMBL2268536

SCHEMBL2268536

CC[SiH2]NC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22974968 0.70
SCHEMBL2271768 0.69
SCHEMBL2272599 0.65
SCHEMBL2462816 0.64
SCHEMBL9794496 0.64
SCHEMBL7388802 0.64
SCHEMBL17987659 0.62
Propane SCHEMBL28058493 0.58
SCHEMBL705157 0.58
Propane SCHEMBL25366971 0.55

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 76 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12272557-B2 Semiconductor device and method TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2025-04-08 US claimed
US-11862468-B2 Semiconductor device and method TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2024-01-02 US claimed
US-20230377891-A1 SEMICONDUCTOR DEVICE AND METHOD TAIWAN SEMICONDUCOR MFG CO LTD (TW) 2023-11-23 US claimed
US-20220246433-A1 Semiconductor Device and Method TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2022-08-04 US claimed
CN-109266181-A A kind of ceramic modified epoxy coating of fire resistant water-based inorganic nano and preparation method thereof 湖南凯斯利新材料有限公司 2019-01-25 CN claimed
US-20100009546-A1 Aminosilanes for Shallow Trench Isolation Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-01-14 US claimed
EP-2144279-A2 Aminosilanes for shallow trench isolation films Air Products and Chemicals, Inc. (US) 2010-01-13 EP claimed
CN-101624698-A Aminosilane used for shallow trench isolation thin film AIR PROD & CHEM 2010-01-13 CN claimed
US-20260082833-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM Kokusai Electric Corporation (JP) 2026-03-19 US disclosed
US-12494364-B2 Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium Kokusai Electric Corporation (JP) 2025-12-09 US disclosed
US-12431336-B2 Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus Kokusai Electric Corporation (JP) 2025-09-30 US disclosed
US-12381091-B2 Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus Kokusai Electric Corporation (JP) 2025-08-05 US disclosed
CN-120033118-A Processing method, semiconductor device manufacturing method, processing apparatus, and program product 株式会社国际电气 2025-05-23 CN disclosed
US-12272557-B2 Semiconductor device and method TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2025-04-08 US disclosed
CN-103026472-A Method for depositing cyclic thin film EUGENE TECHNOLOGY CO LTD 2013-04-03 CN disclosed
CN-103026471-A Method for depositing cyclic thin film EUGENE TECHNOLOGY CO LTD 2013-04-03 CN disclosed
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
CN-102686773-A Film forming method and film forming apparatus TOKYO ELECTRON LTD 2012-09-19 CN disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
EP-2144279-A2 Aminosilanes for shallow trench isolation films Air Products and Chemicals, Inc. (US) 2010-01-13 EP disclosed