⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2267603 | 0.89 | LMNA (0.30) | — | |
| SCHEMBL2272172 | 0.88 | — | — | |
| SCHEMBL20500169 | 0.85 | — | — | |
| SCHEMBL2269801 | 0.81 | TSHR (0.33) | — | |
| SCHEMBL2270112 | 0.79 | — | — | |
| SCHEMBL20500122 | 0.78 | — | — | |
| SCHEMBL2104298 | 0.73 | — | — | |
| SCHEMBL2102644 | 0.73 | — | — | |
| SCHEMBL2270448 | 0.72 | — | — | |
| SCHEMBL2271878 | 0.71 | LMNA (0.30) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-111886676-B | Method for treating surface of wafer and composition therefor | 中央硝子株式会社 | 2024-09-27 | — | — | CN | claimed |
| US-11670512-B2 | Selective deposition on silicon containing surfaces | VERSUM MATERIALS US, LLC (US) | 2023-06-06 | — | — | US | claimed |
| CN-110612364-B | Selective deposition on silicon-containing surfaces | 弗萨姆材料美国有限责任公司 | 2022-04-05 | — | — | CN | claimed |
| US-20210118684-A1 | SELECTIVE DEPOSITION ON SILICON CONTAINING SURFACES | VERSUM MATERIALS US, LLC | 2021-04-22 | — | — | US | claimed |
| CN-110612364-A | Selective deposition on silicon-containing surfaces | 弗萨姆材料美国有限责任公司 | 2019-12-24 | — | — | CN | claimed |
| WO-2018170382-A1 | SELECTIVE DEPOSITION ON SILICON CONTAINING SURFACES | VERSUM MATERIALS US, LLC (US) | 2018-09-20 | — | — | WO | claimed |
| US-20250376758-A1 | SELECTIVE DEPOSITION OF METAL-CONTAINING MATERIAL | ASM IP HOLDING BV (NL) | 2025-12-11 | — | — | US | disclosed |
| US-11670512-B2 | Selective deposition on silicon containing surfaces | VERSUM MATERIALS US, LLC (US) | 2023-06-06 | — | — | US | disclosed |
| CN-110612364-B | Selective deposition on silicon-containing surfaces | 弗萨姆材料美国有限责任公司 | 2022-04-05 | — | — | CN | disclosed |
| US-20210118684-A1 | SELECTIVE DEPOSITION ON SILICON CONTAINING SURFACES | VERSUM MATERIALS US, LLC | 2021-04-22 | — | — | US | disclosed |
| CN-110612364-A | Selective deposition on silicon-containing surfaces | 弗萨姆材料美国有限责任公司 | 2019-12-24 | — | — | CN | disclosed |
| WO-2018170382-A1 | SELECTIVE DEPOSITION ON SILICON CONTAINING SURFACES | VERSUM MATERIALS US, LLC (US) | 2018-09-20 | — | — | WO | disclosed |
| CN-107633955-A | The hybrid super capacitor of service life with raising | 罗伯特·博世有限公司 | 2018-01-26 | — | — | CN | disclosed |
| US-8404584-B2 | Method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2013-03-26 | — | — | US | disclosed |
| US-20110207319-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-08-25 | — | — | US | disclosed |