⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2273834 | 0.81 | — | — | |
| SCHEMBL2267424 | 0.76 | LMNA (0.30) | — | |
| SCHEMBL17041911 | 0.72 | CA1 (0.30) | — | |
| SCHEMBL2269264 | 0.72 | — | — | |
| SCHEMBL15309959 | 0.69 | — | — | |
| SCHEMBL2102068 | 0.69 | — | — | |
| SCHEMBL2269545 | 0.67 | TSHR (0.33) | — | |
| SCHEMBL27032860 | 0.67 | DNM1 (0.33) | — | |
| SCHEMBL15309820 | 0.67 | — | — | |
| SCHEMBL2269072 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 107 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12421603-B2 | Composition for high temperature atomic layer deposition of high quality silicon oxide thin films | VERSUM MATERIALS US, LLC (US) | 2025-09-23 | — | — | US | claimed |
| CN-119900018-A | Composition for high temperature atomic layer deposition of high quality silicon oxide films | 弗萨姆材料美国有限责任公司 | 2025-04-29 | — | — | CN | claimed |
| US-11649547-B2 | Deposition of carbon doped silicon oxide | VERSUM MATERIALS US, LLC (US) | 2023-05-16 | — | — | US | claimed |
| US-20210363639-A1 | COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC (US) | 2021-11-25 | — | — | US | claimed |
| CN-109906235-B | Process for producing modified diene-containing rubbers, rubbers and compositions based thereon | 公共型股份公司希布尔控股 | 2021-11-12 | — | — | CN | claimed |
| EP-3902939-A1 | DEPOSITION OF CARBON DOPED SILICON OXIDE | Versum Materials US, LLC (US) | 2021-11-03 | — | — | EP | claimed |
| CN-113383108-A | Deposition of carbon-doped silicon oxide | 弗萨姆材料美国有限责任公司 | 2021-09-10 | — | — | CN | claimed |
| EP-3844319-A1 | COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS | Versum Materials US, LLC (US) | 2021-07-07 | — | — | EP | claimed |
| CN-112969816-A | Compositions for high temperature atomic layer deposition of high quality silicon oxide films | 弗萨姆材料美国有限责任公司 | 2021-06-15 | — | — | CN | claimed |
| WO-2020163359-A1 | DEPOSITION OF CARBON DOPED SILICON OXIDE | VERSUM MATERIALS US, LLC (US) | 2020-08-13 | — | — | WO | claimed |
| US-20200248309-A1 | Deposition Of Carbon Doped Silicon Oxide | VERSUM MATERIALS US, LLC (US) | 2020-08-06 | — | — | US | claimed |
| WO-2020072768-A1 | COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC (US) | 2020-04-09 | — | — | WO | claimed |
| CN-109906235-A | Produce method, rubber and the composition based on it of the modified rubber containing diene | 公共型股份公司希布尔控股 | 2019-06-18 | — | — | CN | claimed |
| US-20170256399-A9 | High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2017-09-07 | — | — | US | claimed |
| CN-103374708-B | High temperature atomic layer deposition of silicon oxide thin films | 气体产品与化学公司 | 2017-05-17 | — | — | CN | claimed |
| US-20160365244-A1 | High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2016-12-15 | — | — | US | claimed |
| US-20130295779-A1 | HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC | 2013-11-07 | — | — | US | claimed |
| CN-103374708-A | High temperature atomic layer deposition of silicon oxide thin films | AIR PROD & CHEM | 2013-10-30 | — | — | CN | claimed |
| EP-2650399-A2 | High temperature atomic layer deposition of silicon oxide thin films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-10-16 | — | — | EP | claimed |
| US-20260076110-A1 | HYBRID ATOMIC LAYER DEPOSITION | LAM RES CORP (US) | 2026-03-12 | — | — | US | disclosed |
| US-20250372367-A1 | DEPOSITION AND ETCH OF SILICON-CONTAINING LAYER | LAM RES CORP (US) | 2025-12-04 | — | — | US | disclosed |
| EP-4636124-A1 | SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND PROGRAM | Kokusai Electric Corp. (JP) | 2025-10-22 | — | — | EP | disclosed |
| US-20250308910-A1 | SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM | Kokusai Electric Corporation (JP) | 2025-10-02 | — | — | US | disclosed |
| US-12421603-B2 | Composition for high temperature atomic layer deposition of high quality silicon oxide thin films | VERSUM MATERIALS US, LLC (US) | 2025-09-23 | — | — | US | disclosed |
| US-20250197996-A1 | LOW-K DIELECTRIC PROTECTION DURING PLASMA DEPOSITION OF SILICON NITRIDE | LAM RES CORP (US) | 2025-06-19 | — | — | US | disclosed |
| US-20250188609-A1 | SEAM-FREE AND CRACK-FREE DEPOSITION | LAM RES CORP (US) | 2025-06-12 | — | — | US | disclosed |
| US-20250166989-A1 | THERMAL FILM DEPOSITION | LAM RES CORP (US) | 2025-05-22 | — | — | US | disclosed |
| CN-119900018-A | Composition for high temperature atomic layer deposition of high quality silicon oxide films | 弗萨姆材料美国有限责任公司 | 2025-04-29 | — | — | CN | disclosed |
| CN-113966350-B | Modified vinyl aromatic copolymer, process for producing the same, modified conjugated diene copolymer, and use of the same | 日铁化学材料株式会社 | 2025-03-18 | — | — | CN | disclosed |
| CN-119604963-A | Hybrid atomic layer deposition | 朗姆研究公司 | 2025-03-11 | — | — | CN | disclosed |
| US-20250054747-A1 | CONFORMAL DEPOSITION OF SILICON NITRIDE | LAM RES CORP (US) | 2025-02-13 | — | — | US | disclosed |
| US-20250038003-A1 | LOW TEMPERATURE MOLYBDENUM DEPOSITION ASSISTED BY SILICON-CONTAINING REACTANTS | LAM RESEARCH CORPORATION (US) | 2025-01-30 | — | — | US | disclosed |
| US-20250014890-A1 | CONFORMAL, CARBON-DOPED SILICON NITRIDE FILMS AND METHODS THEREOF | LAM RESEARCH CORPORATION | 2025-01-09 | — | — | US | disclosed |
| CN-119213529-A | Seamless and crack-free deposition | 朗姆研究公司 | 2024-12-27 | — | — | CN | disclosed |
| CN-119213530-A | Low-k dielectric protection during plasma deposition of silicon nitride | 朗姆研究公司 | 2024-12-27 | — | — | CN | disclosed |
| US-12173098-B2 | Modified vinylaromatic copolymer, production method therefor, modified conjugated diene copolymer obtained therefrom and composition thereof, crosslinked rubber object, and tire member | NIPPON STEEL CHEMICAL & MATERIAL CO., LTD. (JP) | 2024-12-24 | — | — | US | disclosed |
| US-20240410053-A1 | CONFORMAL SILICON OXIDE DEPOSITION USING AMINOSILANE AND CHLOROSILANE PRECURSORS | LAM RES CORP (US) | 2024-12-12 | — | — | US | disclosed |
| WO-2024243002-A1 | LOW PRESSURE CHEMICAL VAPOR DEPOSITION OF SILICON OXIDE | LAM RESEARCH CORPORATION (US) | 2024-11-28 | — | — | WO | disclosed |
| WO-2024220583-A1 | CAPACITANCE REDUCTION | LAM RESEARCH CORPORATION (US) | 2024-10-24 | — | — | WO | disclosed |
| US-20240355624-A1 | IN-SITU CORE PROTECTION IN MULTI-PATTERNING | LAM RES CORP (US) | 2024-10-24 | — | — | US | disclosed |
| CN-118805241-A | Thermal film deposition | 朗姆研究公司 | 2024-10-18 | — | — | CN | disclosed |
| EP-4442713-A1 | MODIFIED VINYL AROMATIC COPOLYMER, METHOD FOR PRODUCING SAME, MODIFIED CONJUGATED DIENE COPOLYMER OBTAINED FROM SAME, RESIN COMPOSITION, CROSSLINKED RESIN AND STRUCTURAL MEMBER | NIPPON STEEL CHEMICAL & MATERIAL CO., LTD. (JP) | 2024-10-09 | — | — | EP | disclosed |
| CN-118696395-A | Conformal silicon oxide deposition using aminosilane and chlorosilane precursors | 朗姆研究公司 | 2024-09-24 | — | — | CN | disclosed |
| CN-118402040-A | Low temperature molybdenum deposition assisted by silicon-containing reactants | 朗姆研究公司 | 2024-07-26 | — | — | CN | disclosed |
| CN-118402039-A | Conformal deposition of silicon nitride | 朗姆研究公司 | 2024-07-26 | — | — | CN | disclosed |
| CN-118355473-A | Conformal carbon-doped silicon nitride films and methods thereof | 朗姆研究公司 | 2024-07-16 | — | — | CN | disclosed |
| CN-118355038-A | Modified vinyl aromatic copolymer, method for producing same, modified conjugated diene copolymer obtained from same, resin composition, resin crosslinked product, and structural member | 日铁化学材料株式会社 | 2024-07-16 | — | — | CN | disclosed |
| WO-2024129962-A1 | LOW K DIELECTRIC GAPFILL | LAM RESEARCH CORPORATION (US) | 2024-06-20 | — | — | WO | disclosed |
| CN-117836904-A | In situ core protection in multiple patterning | 朗姆研究公司 | 2024-04-05 | — | — | CN | disclosed |
| US-20240112907-A1 | METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS | Kokusai Electric Corporation (JP) | 2024-04-04 | — | — | US | disclosed |
| EP-4343814-A1 | METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROGRAM, AND SUBSTRATE PROCESSING APPARATUS | Kokusai Electric Corp. (JP) | 2024-03-27 | — | — | EP | disclosed |
| CN-117766374-A | Substrate processing method, semiconductor device manufacturing method, substrate processing system, and recording medium | 株式会社国际电气 | 2024-03-26 | — | — | CN | disclosed |
| CN-117766384-A | Substrate processing method, semiconductor device manufacturing method, substrate processing system, and recording medium | 株式会社国际电气 | 2024-03-26 | — | — | CN | disclosed |
| CN-117702084-A | Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and recording medium | 株式会社国际电气 | 2024-03-15 | — | — | CN | disclosed |
| US-20240030026-A1 | PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROCESSING APPARATUS, AND RECORDING MEDIUM | Kokusai Electric Corporation (JP) | 2024-01-25 | — | — | US | disclosed |
| US-20240030062-A1 | INTEGRATION OF FULLY ALIGNED VIA THROUGH SELECTIVE DEPOSITION AND RESISTIVITY REDUCTION | LAM RESEARCH CORPORATION | 2024-01-25 | — | — | US | disclosed |
| WO-2024006211-A1 | DEPOSITION AND ETCH OF SILICON-CONTAINING LAYER | LAM RESEARCH CORPORATION (US) | 2024-01-04 | — | — | WO | disclosed |
| CN-117253819-A | Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and recording medium | 株式会社国际电气 | 2023-12-19 | — | — | CN | disclosed |
| WO-2023230170-A1 | HYBRID ATOMIC LAYER DEPOSITION | LAM RESEARCH CORPORATION (US) | 2023-11-30 | — | — | WO | disclosed |
| CN-117121172-A | Method for manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and program | 株式会社国际电气 | 2023-11-24 | — | — | CN | disclosed |
| CN-117121173-A | Integration of fully aligned vias by selective deposition and resistivity reduction | 朗姆研究公司 | 2023-11-24 | — | — | CN | disclosed |
| WO-2023178216-A1 | LOW-K DIELECTRIC PROTECTION DURING PLASMA DEPOSITION OF SILICON NITRIDE | LAM RESEARCH CORPORATION (US) | 2023-09-21 | — | — | WO | disclosed |
| WO-2023178203-A1 | SEAM-FREE AND CRACK-FREE DEPOSITION | LAM RESEARCH CORPORATION (US) | 2023-09-21 | — | — | WO | disclosed |
| WO-2023163950-A1 | THERMAL FILM DEPOSITION | LAM RESEARCH CORPORATION (US) | 2023-08-31 | — | — | WO | disclosed |
| WO-2023122557-A1 | CONFORMAL SILICON OXIDE DEPOSITION USING AMINOSILANE AND CHLOROSILANE PRECURSORS | LAM RESEARCH CORPORATION (US) | 2023-06-29 | — | — | WO | disclosed |
| WO-2023114641-A1 | CONFORMAL DEPOSITION OF SILICON NITRIDE | LAM RESEARCH CORPORATION (US) | 2023-06-22 | — | — | WO | disclosed |
| WO-2023100993-A1 | MODIFIED VINYL AROMATIC COPOLYMER, METHOD FOR PRODUCING SAME, MODIFIED CONJUGATED DIENE COPOLYMER OBTAINED FROM SAME, RESIN COMPOSITION, CROSSLINKED RESIN AND STRUCTURAL MEMBER | 日鉄ケミカル＆マテリアル株式会社 | 2023-06-08 | — | — | WO | disclosed |
| WO-2023102440-A1 | CONFORMAL, CARBON-DOPED SILICON NITRIDE FILMS AND METHODS THEREOF | LAM RESEARCH CORPORATION (US) | 2023-06-08 | — | — | WO | disclosed |
| US-11649547-B2 | Deposition of carbon doped silicon oxide | VERSUM MATERIALS US, LLC (US) | 2023-05-16 | — | — | US | disclosed |
| US-20230102867-A1 | MODIFIED VINYLAROMATIC COPOLYMER, PRODUCTION METHOD THEREFOR, MODIFIED CONJUGATED DIENE COPOLYMER OBTAINED THEREFROM AND COMPOSITION THEREOF, CROSSLINKED RUBBER OBJECT, AND TIRE MEMBER | NIPPON STEEL CHEMICAL & MATERIAL CO., LTD. (JP) | 2023-03-30 | — | — | US | disclosed |
| WO-2023028461-A1 | IN-SITU CORE PROTECTION IN MULTI-PATTERNING | LAM RESEARCH CORPORATION (US) | 2023-03-02 | — | — | WO | disclosed |
| WO-2022264430-A1 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM | 株式会社KOKUSAI ELECTRIC | 2022-12-22 | — | — | WO | disclosed |
| WO-2022221881-A1 | INTEGRATION OF FULLY ALIGNED VIA THROUGH SELECTIVE DEPOSITION AND RESISTIVITY REDUCTION | LAM RESEARCH CORPORATION (US) | 2022-10-20 | — | — | WO | disclosed |
| EP-4005819-A1 | MODIFIED VINYLAROMATIC COPOLYMER, PRODUCTION METHOD THEREFOR, MODIFIED CONJUGATED-DIENE COPOLYMER OBTAINED THEREFROM AND COMPOSITION THEREOF, CROSSLINKED RUBBER OBJECT, AND TIRE MEMBER | Nippon Steel Chemical & Material Co., Ltd. (JP) | 2022-06-01 | — | — | EP | disclosed |
| CN-113966350-A | Modified vinyl aromatic copolymer and method for producing same, modified conjugated diene copolymer obtained therefrom, composition of modified conjugated diene copolymer, crosslinked rubber, and tire member | 日铁化学材料株式会社 | 2022-01-21 | — | — | CN | disclosed |
| US-20210363639-A1 | COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC (US) | 2021-11-25 | — | — | US | disclosed |
| CN-109906235-B | Process for producing modified diene-containing rubbers, rubbers and compositions based thereon | 公共型股份公司希布尔控股 | 2021-11-12 | — | — | CN | disclosed |
| EP-3902939-A1 | DEPOSITION OF CARBON DOPED SILICON OXIDE | Versum Materials US, LLC (US) | 2021-11-03 | — | — | EP | disclosed |
| CN-113383108-A | Deposition of carbon-doped silicon oxide | 弗萨姆材料美国有限责任公司 | 2021-09-10 | — | — | CN | disclosed |
| EP-3844319-A1 | COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS | Versum Materials US, LLC (US) | 2021-07-07 | — | — | EP | disclosed |
| CN-112969816-A | Compositions for high temperature atomic layer deposition of high quality silicon oxide films | 弗萨姆材料美国有限责任公司 | 2021-06-15 | — | — | CN | disclosed |
| US-10991571-B2 | High temperature atomic layer deposition of silicon oxide thin films | VERSUM MATERIALS US, LLC (US) | 2021-04-27 | — | — | US | disclosed |
| US-10916437-B2 | Methods of forming micropatterns and substrate processing apparatus | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-02-09 | — | — | US | disclosed |
| WO-2020163359-A1 | DEPOSITION OF CARBON DOPED SILICON OXIDE | VERSUM MATERIALS US, LLC (US) | 2020-08-13 | — | — | WO | disclosed |
| US-20200248309-A1 | Deposition Of Carbon Doped Silicon Oxide | VERSUM MATERIALS US, LLC (US) | 2020-08-06 | — | — | US | disclosed |
| WO-2020072768-A1 | COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC (US) | 2020-04-09 | — | — | WO | disclosed |
| US-20190198342-A1 | Methods of Forming Micropatterns and Substrate Processing Apparatus | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-06-27 | — | — | US | disclosed |
| US-20190189431-A1 | High Temperature Atomic Layer Deposition of Silicon Oxide Thin Films | VERSUM MATERIALS US, LLC (US) | 2019-06-20 | — | — | US | disclosed |
| CN-109906235-A | Produce method, rubber and the composition based on it of the modified rubber containing diene | 公共型股份公司希布尔控股 | 2019-06-18 | — | — | CN | disclosed |
| US-10242864-B2 | High temperature atomic layer deposition of silicon oxide thin films | VERSUM MATERIALS US, LLC (US) | 2019-03-26 | — | — | US | disclosed |
| US-9887080-B2 | Method of forming SiOCN material layer and method of fabricating semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-02-06 | — | — | US | disclosed |
| US-20170256399-A9 | High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2017-09-07 | — | — | US | disclosed |
| US-20170186603-A1 | METHOD OF FORMING SiOCN MATERIAL LAYER AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-06-29 | — | — | US | disclosed |
| CN-103374708-B | High temperature atomic layer deposition of silicon oxide thin films | 气体产品与化学公司 | 2017-05-17 | — | — | CN | disclosed |
| US-20160365244-A1 | High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2016-12-15 | — | — | US | disclosed |
| US-9460912-B2 | High temperature atomic layer deposition of silicon oxide thin films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2016-10-04 | — | — | US | disclosed |
| US-9315600-B2 | Method for producing modified conjugated diene polymer, modified conjugated diene polymer, modified conjugated diene polymer composition, rubber composition and tire | ASAHI KASEI CHEMICALS CORPORATION (JP) | 2016-04-19 | — | — | US | disclosed |
| CN-103764682-B | The manufacture method of modified conjugated diene polymer, modified conjugated diene polymer, modified conjugated diene polymer composition, rubber combination and tire | ASAHI KASEI CHEMICALS CORP. (JP) | 2016-01-20 | — | — | CN | disclosed |
| EP-2749575-B1 | METHOD FOR PRODUCING MODIFIED CONJUGATED DIENE POLYMER, MODIFIED CONJUGATED DIENE POLYMER, MODIFIED CONJUGATED DIENE POLYMER COMPOSITION, RUBBER COMPOSITION, AND TIRE | ASAHI KASEI CHEMICALS CORP (JP) | 2015-05-13 | — | — | EP | disclosed |
| US-20140371383-A1 | Method for Producing Modified Conjugated Diene Polymer, Modified Conjugated Diene Polymer, Modified Conjugated Diene Polymer Composition, Rubber Composition and Tire | ASAHI KASEI CHEMICALS CORPORATION (JP) | 2014-12-18 | — | — | US | disclosed |
| EP-2749575-A1 | METHOD FOR PRODUCING DENATURED CONJUGATED DIENE POLYMER, DENATURED CONJUGATED DIENE POLYMER, DENATURED CONJUGATED DIENE POLYMER COMPOSITION, RUBBER COMPOSITION, AND TIRE | Asahi Kasei Chemicals Corporation (JP) | 2014-07-02 | — | — | EP | disclosed |
| CN-103764682-A | Method for producing denatured conjugated diene polymer, denatured conjugated diene polymer, denatured conjugated diene polymer composition, rubber composition, and tire | ASAHI KASEI CHEMICALS CORP | 2014-04-30 | — | — | CN | disclosed |
| US-20130295779-A1 | HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC | 2013-11-07 | — | — | US | disclosed |
| CN-103374708-A | High temperature atomic layer deposition of silicon oxide thin films | AIR PROD & CHEM | 2013-10-30 | — | — | CN | disclosed |
| EP-2650399-A2 | High temperature atomic layer deposition of silicon oxide thin films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-10-16 | — | — | EP | disclosed |
| US-8404584-B2 | Method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2013-03-26 | — | — | US | disclosed |
| US-20110207319-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-08-25 | — | — | US | disclosed |
| US-20110207319-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-08-25 | — | — | US | disclosed |