SCHEMBL2270781

SCHEMBL2270781

CC([SiH3])N(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Hydrochloric Acid SCHEMBL28751231 0.95
SCHEMBL5350181 0.70
SCHEMBL258874 0.70
SCHEMBL27977434 0.67 ALDH1A1 (0.30)
SCHEMBL16976238 0.67
SCHEMBL20586 0.67
SCHEMBL2101333 0.67
SCHEMBL7162516 0.67 KDM4E (0.32)
Trimethylammonium SCHEMBL27986618 0.67
SCHEMBL2597609 0.65

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6156668-A Method for forming a fine pattern in a semiconductor device HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2000-12-05 US claimed
EP-0671483-B1 Method for vapor deposition of a ceramic coating using a steam-containing carrier gas and non-alkoxy silane precursors ENICHEM SPA (IT) 1997-12-29 EP claimed
EP-0671483-A1 Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors ENICHEM S.p.A. (IT) 1995-09-13 EP claimed
US-5424095-A Decomposing organosilicon precursor inside chemical reactor to form film of ceramic material on surface; prevents coking ENIRICERCHE S.P.A. (IT) 1995-06-13 US claimed
CN-120153457-A Formation of doped silicon or boron layers 朗姆研究公司 2025-06-13 CN disclosed
US-20240030026-A1 PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROCESSING APPARATUS, AND RECORDING MEDIUM Kokusai Electric Corporation (JP) 2024-01-25 US disclosed
WO-2022264430-A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM 株式会社KOKUSAI ELECTRIC 2022-12-22 WO disclosed
CN-115053016-A Precursors for high temperature deposition of silicon-containing films 朗姆研究公司 2022-09-13 CN disclosed
CN-105801612-B Organoaminodisilane precursors and methods of thin film deposition comprising the same 弗萨姆材料美国有限责任公司 2020-11-27 CN disclosed
CN-108558926-A Organoaminodisilane precursors and methods of thin film deposition comprising the same 弗萨姆材料美国有限责任公司 2018-09-21 CN disclosed
CN-103450242-B Organoaminodisilane precursors and methods of thin film deposition comprising the same 弗萨姆材料美国有限责任公司 2018-05-01 CN disclosed
CN-104203915-B (3, 4-dichloro-phenyl) - ((S) -3-propyl-pyrrolidin-3-yl) -methanone hydrochloride and method of manufacture 霍夫曼-拉罗奇有限公司 2017-03-08 CN disclosed
EP-0112434-B1 HYDROGEN BEARING SILYL CARBAMATES UNION CARBIDE CORPORATION (US) 1988-08-17 EP disclosed
EP-0273456-A2 Vapor phase alcoholysis of aminosilanes and carbamatosilanes UNION CARBIDE CORPORATION (US) 1988-07-06 EP disclosed
US-4730074-A Vapor phase alcoholysis of aminosilanes and carbamatosilanes UNION CARBIDE CORPORATION (US) 1988-03-08 US disclosed
EP-0098912-B1 PROCESS FOR THE PREPARATION OF ALKOXYHYDRIDOSILANES UNION CARBIDE CORPORATION (US) 1986-04-23 EP disclosed
EP-0098911-A1 Improved process for the preparation of oximatohydridosilanes and aminoxyhydridosilanes UNION CARBIDE CORPORATION (US) 1984-01-25 EP disclosed
EP-0098912-A1 Process for the preparation of alkoxyhydridosilanes UNION CARBIDE CORPORATION (US) 1984-01-25 EP disclosed
US-4395564-A REACTING AN ALCOHOL WITH SILYL-AMINE UNION CARBIDE CORPORATION (US) 1983-07-26 US disclosed
US-4384131-A Process for the preparation of oximatohydridosilanes and aminoxyhydridosilanes UNION CARBIDE CORPORATION (US) 1983-05-17 US disclosed