SCHEMBL2273472

SCHEMBL2273472

C=C[SiH](Cl)CCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2268135 0.83
SCHEMBL2271212 0.75
SCHEMBL5881449 0.69
SCHEMBL5881396 0.69
SCHEMBL3482292 0.69
SCHEMBL3482607 0.67
SCHEMBL8769608 0.67
SCHEMBL31506748 0.66 LMNA (0.37)
SCHEMBL2269605 0.65
Methyl Alcohol SCHEMBL6428926 0.65

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116854923-A Boron-containing tackifier for silicone rubber and preparation method and application thereof 中国科学院化学研究所 2023-10-10 CN claimed
CN-116855223-A High-bonding-strength organic silicon bonding sealant and preparation method and application thereof 中国科学院化学研究所 2023-10-10 CN claimed
CN-116854923-A Boron-containing tackifier for silicone rubber and preparation method and application thereof 中国科学院化学研究所 2023-10-10 CN disclosed
CN-116855223-A High-bonding-strength organic silicon bonding sealant and preparation method and application thereof 中国科学院化学研究所 2023-10-10 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
CN-102471581-B Curable composition for semiconductor encapsulation ADEKA CORP 2015-01-28 CN disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
CN-101641767-B Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device FUJITSU LTD 2013-10-30 CN disclosed
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
CN-102532911-A Silicon-containing curable composition ADEKA CORP 2012-07-04 CN disclosed
CN-102471581-A Curable composition for semiconductor encapsulation ADEKA CORP 2012-05-23 CN disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
WO-2007120014-A1 SURFACE MODIFIED ORGANIC·INORGANIC HYBRID GLASS, PROTECTING GROUP INDUCED ALCOHOL OR ITS DERIVATIVE AND PRODUCING METHOD THEREOF INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY (KR) 2007-10-25 WO disclosed