Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL919080 | 0.89 | — | — | |
| SCHEMBL5712315 | 0.80 | — | — | |
| SCHEMBL31124806 | 0.78 | — | — | |
| SCHEMBL407549 | 0.78 | — | — | |
| SCHEMBL3911824 | 0.78 | — | — | |
| SCHEMBL1860943 | 0.78 | — | — | |
| SCHEMBL4347224 | 0.78 | — | — | |
| SCHEMBL993535 | 0.78 | — | — | |
| SCHEMBL21806319 | 0.78 | — | — | |
| SCHEMBL32690904 | 0.78 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 113 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113061990-A | Cobalt oxide-based magnetic oxide thin film and preparation method and application thereof | 中国科学院物理研究所 | 2021-07-02 | — | — | CN | claimed |
| US-8148712-B2 | Group III nitride compound semiconductor stacked structure | SHOWA DENKO K.K. (JP) | 2012-04-03 | — | — | US | claimed |
| US-20090146161-A1 | GROUP III NITRIDE COMPOUND SEMICONDUCTOR STACKED STRUCTURE | SHOWA DENKO K.K. (JP) | 2009-06-11 | — | — | US | claimed |
| EP-2019437-A1 | III NITRIDE COMPOUND SEMICONDUCTOR LAMINATED STRUCTURE | Showa Denko K.K. (JP) | 2009-01-28 | — | — | EP | claimed |
| US-20080223434-A1 | SOLAR CELL AND PROCESS FOR PRODUCING THE SAME | SHOWA DENKO K.K. (JP) | 2008-09-18 | — | — | US | claimed |
| US-12232329-B2 | Stacked ferroelectric structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-02-18 | — | — | US | disclosed |
| US-12207474-B2 | Stacked ferroelectric structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-01-21 | — | — | US | disclosed |
| US-12154965-B2 | Carrier barrier layer for tuning a threshold voltage of a ferroelectric memory device | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-26 | — | — | US | disclosed |
| US-20240387685-A1 | CARRIER BARRIER LAYER FOR TUNING A THRESHOLD VOLTAGE OF A FERROELECTRIC MEMORY DEVICE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-21 | — | — | US | disclosed |
| US-12150309-B2 | Double gate metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-19 | — | — | US | disclosed |
| US-20240373642-A1 | DOUBLE GATE METAL-FERROELECTRIC-METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MFMIS-FET) STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-07 | — | — | US | disclosed |
| US-20230371272-A1 | STACKED FERROELECTRIC STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-16 | — | — | US | disclosed |
| EP-2099078-A1 | METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP | Showa Denko K.K. (JP) | 2009-09-09 | — | — | EP | disclosed |
| US-20090194784-A1 | GROUP-III NITRIDE COMPOUND SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF, GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF, AND LAMP | SHOWA DENKO K.K. (JP) | 2009-08-06 | — | — | US | disclosed |
| US-20090146161-A1 | GROUP III NITRIDE COMPOUND SEMICONDUCTOR STACKED STRUCTURE | SHOWA DENKO K.K. (JP) | 2009-06-11 | — | — | US | disclosed |
| US-20090142870-A1 | MANUFACTURING METHOD OF GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE | SHOWA DENKO K.K. (JP) | 2009-06-04 | — | — | US | disclosed |
| EP-2056339-A1 | METHOD FOR MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP | Showa Denko K.K. (JP) | 2009-05-06 | — | — | EP | disclosed |
| EP-2019437-A1 | III NITRIDE COMPOUND SEMICONDUCTOR LAMINATED STRUCTURE | Showa Denko K.K. (JP) | 2009-01-28 | — | — | EP | disclosed |
| US-20080303054-A1 | APPARATUS FOR PRODUCING GROUP-III NITRIDE SEMICONDUCTOR LAYER, METHOD OF PRODUCING GROUP-III NITRIDE SEMICONDUCTOR LAYER, METHOD OF PRODUCING GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE THEREOF, AND LAMP THEREOF | SHOWA DENKO K.K. (JP) | 2008-12-11 | — | — | US | disclosed |
| US-20080223434-A1 | SOLAR CELL AND PROCESS FOR PRODUCING THE SAME | SHOWA DENKO K.K. (JP) | 2008-09-18 | — | — | US | disclosed |