Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Zinc Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Zinc Ion SCHEMBL6046919 | 0.87 | — | — | |
| Zinc Ion SCHEMBL16053834 | 0.87 | — | — | |
| Zinc Ion SCHEMBL9348381 | 0.82 | GPR39 (0.33) | — | |
| Zinc Ion SCHEMBL634081 | 0.82 | — | — | |
| Zinc Ion SCHEMBL10427052 | 0.82 | GPR39 (0.33) | — | |
| SCHEMBL28832 | 0.82 | — | — | |
| Zinc Ion SCHEMBL27539 | 0.82 | — | — | |
| Zinc Ion SCHEMBL7744965 | 0.82 | GPR39 (0.33) | — | |
| Zinc Ion SCHEMBL7794532 | 0.82 | GPR39 (0.33) | — | |
| Zinc Ion SCHEMBL4757897 | 0.82 | GPR39 (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 183 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260150484-A1 | LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE | Sharp Display Technology Corporation (JP) | 2026-05-28 | — | — | US | claimed |
| US-20260090232-A1 | DISPLAY DEVICE AND METHOD FOR PRODUCING DISPLAY DEVICE | SHARP DISPLAY TECHNOLOGY CORP (JP) | 2026-03-26 | — | — | US | claimed |
| US-20260049244-A1 | LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, AND METHOD FOR PRODUCING LIGHT-EMITTING ELEMENT | SHARP DISPLAY TECHNOLOGY CORP (JP) | 2026-02-19 | — | — | US | claimed |
| US-12426438-B2 | Quantum dots light emitting diode, display apparatus, and method of fabricating quantum dots light emitting diode | Beijing Boe Technology Development Co., Ltd. (CN) | 2025-09-23 | — | — | US | claimed |
| US-20250234739-A1 | DISPLAY PANEL AND MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS | Beijing Boe Technology Development Co., Ltd. (CN) | 2025-07-17 | — | — | US | claimed |
| CN-120092489-A | Light-emitting element and display device | 夏普显示科技株式会社 | 2025-06-03 | — | — | CN | claimed |
| US-12324300-B2 | Display panel and manufacturing method therefor, and display apparatus | Beijing Boe Technology Development Co., Ltd. (CN) | 2025-06-03 | — | — | US | claimed |
| CN-119318233-A | Light emitting element and display device | 夏普显示科技株式会社 | 2025-01-14 | — | — | CN | claimed |
| WO-2024218846-A1 | LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT, AND METHOD FOR FORMING LIGHT-EMITTING LAYER | シャープディスプレイテクノロジー株式会社 | 2024-10-24 | — | — | WO | claimed |
| WO-2024218932-A1 | LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, AND METHOD FOR FORMING LIGHT-EMITTING LAYER | シャープディスプレイテクノロジー株式会社 | 2024-10-24 | — | — | WO | claimed |
| US-20190252571-A1 | METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS | INTEGRATED SOLAR (NO) | 2019-08-15 | — | — | US | claimed |
| US-20190055126-A1 | NANOCRYSTAL PREPARATION METHOD, NANOCRYSTALS, AND APPARATUS FOR PREPARING AND STORING DISSOLVED GAS | Suzhou Xingshou Nanotech Co., Ltd. (CN) | 2019-02-21 | — | — | US | claimed |
| US-20170352536-A1 | A METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS | INTEGRATED SOLAR (NO) | 2017-12-07 | — | — | US | claimed |
| US-20170352308-A1 | LUMINOUS MEMBER, METHOD OF DRIVING LUMINOUS MEMBER, NON-VOLATILE MEMORY DEVICE, SENSOR, METHOD OF DRIVING SENSOR, AND DISPLAY APPARATUS | UNIVERSITY-INDUSTRY FOUNDATION (UIF), YONSEI UNIVERSITY (KR) | 2017-12-07 | — | — | US | claimed |
| EP-3238229-A1 | A METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS | Integrated Solar (NO) | 2017-11-01 | — | — | EP | claimed |
| US-20160300973-A1 | VARIABLE RANGE PHOTODETECTOR WITH ENHANCED HIGH PHOTON ENERGY RESPONSE AND METHOD THEREOF | U.S. ARMY RESEARCH LABORATORY ATTN: RDRL-LOC-I (US) | 2016-10-13 | — | — | US | claimed |
| US-9379271-B2 | Variable range photodetector and method thereof | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY (US) | 2016-06-28 | — | — | US | claimed |
| US-20150311375-A1 | VARIABLE RANGE PHOTODETECTOR AND METHOD THEREOF | U.S. ARMY RESEARCH LABORATORY ATTN: RDRL-LOC-I (US) | 2015-10-29 | — | — | US | claimed |
| US-20030087129-A1 | Treated phosphor, making method, thin film making apparatus, and EL device | TDK CORP. (JP) | 2003-05-08 | — | — | US | claimed |
| US-5646419-A | n-type wide bandgap semiconductors grown on a p-type layer to form hole injection pn heterojunctions and methods of fabricating the same | CALIFORNIA INSTITUTE OF TECHNOLOGY (US) | 1997-07-08 | — | — | US | claimed |