⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL87723 | 0.94 | — | — | |
| SCHEMBL1042457 | 0.94 | — | — | |
| SCHEMBL16910221 | 0.88 | — | — | |
| SCHEMBL1368899 | 0.88 | — | — | |
| SCHEMBL4427426 | 0.88 | — | — | |
| SCHEMBL2003291 | 0.88 | — | — | |
| SCHEMBL1367740 | 0.88 | — | — | |
| SCHEMBL4018138 | 0.88 | — | — | |
| SCHEMBL5668574 | 0.88 | — | — | |
| SCHEMBL1370263 | 0.88 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6670233-B2 | Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitor | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2003-12-30 | — | — | US | claimed |
| US-20030143803-A1 | Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitor | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2003-07-31 | — | — | US | claimed |
| US-6559001-B2 | Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitor | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2003-05-06 | — | — | US | claimed |
| US-20020192900-A1 | Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitor | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2002-12-19 | — | — | US | claimed |
| US-6169009-B1 | Methods of etching platinum group metal film and forming lower electrode of capacitor | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2001-01-02 | — | — | US | claimed |
| US-11972796-B2 | Resistive random access memory device with three-dimensional cross-point structure and method of operating the same | KIOXIA CORPORATION (JP) | 2024-04-30 | — | — | US | disclosed |
| US-20230024213-A1 | RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-POINT STRUCTURE AND METHOD OF OPERATING THE SAME | KIOXIA CORPORATION (JP) | 2023-01-26 | — | — | US | disclosed |
| US-10971225-B2 | Resistive random access memory device with three-dimensional cross-point structure and method of operating the same | TOSHIBA MEMORY CORPORATION (JP) | 2021-04-06 | — | — | US | disclosed |
| US-10410717-B2 | Resistive random access memory device with three-dimensional cross-point structure and method of operating the same | TOSHIBA MEMORY CORPORATION (JP) | 2019-09-10 | — | — | US | disclosed |
| US-20170256312-A1 | MEMORY DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2017-09-07 | — | — | US | disclosed |
| US-9373679-B2 | Semiconductor device comprising capacitive element | RENESAS ELECTRONICS CORPORATION (JP) | 2016-06-21 | — | — | US | disclosed |
| US-20150024593-A1 | SEMICONDUCTOR DEVICE COMPRISING CAPACITIVE ELEMENT | RENESAS ELECTRONICS CORPORATION (JP) | 2015-01-22 | — | — | US | disclosed |
| US-8810000-B2 | Semiconductor device comprising capacitive element | RENESAS ELECTRONICS CORPORATION (JP) | 2014-08-19 | — | — | US | disclosed |
| US-7989871-B2 | Nonvolatile semiconductor memory device having insulating films that include multiple layers formed by insulating materials having d-orbital metal element and insulating materials without d-orbital metal element | KABUSHIKI KAISHA TOSHIBA (JP) | 2011-08-02 | — | — | US | disclosed |
| US-20100327409-A1 | SEMICONDUCTOR DEVICE COMPRISING CAPACITIVE ELEMENT | RENESAS ELECTRONICS CORPORATION (JP) | 2010-12-30 | — | — | US | disclosed |
| US-20070215929-A1 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2007-09-20 | — | — | US | disclosed |
| US-6670233-B2 | Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitor | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2003-12-30 | — | — | US | disclosed |
| US-20030143803-A1 | Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitor | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2003-07-31 | — | — | US | disclosed |
| US-6559001-B2 | Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitor | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2003-05-06 | — | — | US | disclosed |
| US-20020192900-A1 | Methods of patterning a multi-layer film stack and forming a lower electrode of a capacitor | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2002-12-19 | — | — | US | disclosed |