SCHEMBL4018138

SCHEMBL4018138

O=[Si]([O-])[O-].O=[Si]([O-])[O-].O=[Si]([O-])[O-].O=[Si]([O-])[O-].O=[Si]([O-])[O-].[O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5].[Ta+5].[Ta+5]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL407670 0.94
SCHEMBL1042457 0.94
SCHEMBL7872406 0.88
SCHEMBL1368899 0.88
SCHEMBL404488 0.88
SCHEMBL4344882 0.88
SCHEMBL1367740 0.88
SCHEMBL409529 0.88
SCHEMBL1370263 0.88
SCHEMBL1899231 0.88

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 74 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6943398-B2 Semiconductor device and method for fabricating the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-13 US claimed
US-6891231-B2 Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2005-05-10 US claimed
US-20040094791-A1 Semiconductor device and method for fabricating the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-05-20 US claimed
EP-1420451-A2 Semiconductor non-volatile memory device and method for fabricating the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2004-05-19 EP claimed
WO-2026100165-A1 ELECTRICAL CIRCUIT CONNECTION, CONDUCTIVE SHEET, ELECTROSTATIC CHUCK, AND HEATER 株式会社巴川コーポレーション 2026-05-15 WO disclosed
US-20260108941-A1 POWDERED MATERIAL FOR ADDITIVE MANUFACTURING AND METHOD OF PRODUCING SAID POWDERED MATERIAL FUJIMI INCORPORATED (JP) 2026-04-23 US disclosed
EP-4708332-A1 ELECTRIC WIRE/CABLE COATING MATERIAL, ELECTRIC WIRE/CABLE, VACUUM DEVICE FOR SEMICONDUCTOR MANUFACTURING APPARATUS, SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD FOR MANUFACTURING ELECTRIC WIRE/CABLE COATING MATERIAL DAIKIN INDUSTRIES, LTD. (JP) 2026-03-11 EP disclosed
US-12521789-B2 Additive manufacturing powders with improved physical characteristics, method of manufacture and use thereof TEKNA PLASMA SYSTEMS INC. (CA) 2026-01-13 US disclosed
US-12447533-B2 Powder material for use in additive layer manufacturing, additive layer manufacturing method using same, and molded article FUJIMI INCORPORATED (JP) 2025-10-21 US disclosed
US-12420428-B2 Baked object taking-out apparatus NORITAKE CO., LIMITED (JP) 2025-09-23 US disclosed
EP-4596734-A1 POWDER MATERIAL FOR ADDITIVE MANUFACTURING AND METHOD FOR PRODUCING SAID POWDER MATERIAL Fujimi Incorporated (JP) 2025-08-06 EP disclosed
EP-3159141-B1 POWDER MATERIAL FUJIMI INC (JP) 2025-04-30 EP disclosed
CN-106457668-A Powder material for powder laminate molding and powder laminate molding method using same 福吉米株式会社 2017-02-22 CN disclosed
US-7550344-B2 Semiconductor device and method for fabricating the same PANASONIC CORPORATION (JP) 2009-06-23 US disclosed
US-20070293007-A1 Semiconductor device and method for fabricating the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-12-20 US disclosed
US-7288456-B2 Semiconductor device and method for fabricating the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-10-30 US disclosed
US-20050239251-A1 Semiconductor device and method for fabricating the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-10-27 US disclosed
US-6943398-B2 Semiconductor device and method for fabricating the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-13 US disclosed
US-20040094791-A1 Semiconductor device and method for fabricating the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-05-20 US disclosed
EP-1420451-A2 Semiconductor non-volatile memory device and method for fabricating the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2004-05-19 EP disclosed