⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Butadiene SCHEMBL6343214 | 1.00 | — | — | |
| Butadiene SCHEMBL6342157 | 1.00 | — | — | |
| Butadiene SCHEMBL2892342 | 1.00 | — | — | |
| SCHEMBL6849596 | 0.91 | — | — | |
| SCHEMBL6924022 | 0.91 | — | — | |
| Butadiene SCHEMBL2241488 | 0.81 | — | — | |
| Butadiene SCHEMBL472898 | 0.79 | — | — | |
| SCHEMBL8940325 | 0.79 | ALDH1A1 (0.36) | — | |
| Styrene SCHEMBL10605079 | 0.77 | ALDH1A1 (0.50) | — | |
| SCHEMBL9490191 | 0.75 | ALDH1A1 (0.30) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 85 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6940170-B2 | Techniques for triple and quadruple damascene fabrication | APPLIED MATERIALS, INC. (US) | 2005-09-06 | — | — | US | claimed |
| US-20030089987-A1 | DUAL DAMASCENE MISALIGNMENT TOLERANT TECHNIQUES FOR VIAS AND SACRIFICIAL ETCH SEGMENTS | APPLIED MATERIAL INC. | 2003-05-15 | — | — | US | claimed |
| US-6514671-B1 | Interconnect line formed by dual damascene using dielectric layers having dissimilar etching characteristics | APPLIED MATERIALS, INC. | 2003-02-04 | — | — | US | claimed |
| US-20010041436-A1 | Techniques for triple and quadruple damascene fabrication | APPLIED MATERIALS, INC. | 2001-11-15 | — | — | US | claimed |
| US-20010036719-A1 | Integrated circuits | APPLIED MATERIALS, INC. | 2001-11-01 | — | — | US | claimed |
| US-6284149-B1 | High-density plasma etching of carbon-based low-k materials in a integrated circuit | APPLIED MATERIALS, INC. | 2001-09-04 | — | — | US | claimed |
| EP-1123563-A1 | TECHNIQUES FOR TRIPLE AND QUADRUPLE DAMASCENE FABRICATION | Applied Materials, Inc. (US) | 2001-08-16 | — | — | EP | claimed |
| EP-1110241-A1 | INTERCONNECT LINE FORMED BY DUAL DAMASCENE USING DIELECTRIC LAYERS HAVING DISSIMILAR ETCHING CHARACTERISTICS | APPLIED MATERIALS, INC. (US) | 2001-06-27 | — | — | EP | claimed |
| US-6228758-B1 | Method of making dual damascene conductive interconnections and integrated circuit device comprising same | ADVANCED MICRO DEVICES, INC. | 2001-05-08 | — | — | US | claimed |
| US-6225207-B1 | Techniques for triple and quadruple damascene fabrication | APPLIED MATERIALS, INC. | 2001-05-01 | — | — | US | claimed |
| WO-2000051177-A1 | INTEGRATED CIRCUIT DEVICE WITH AIR DIELECTRIC | ADVANCED MICRO DEVICES, INC. (US) | 2000-08-31 | — | — | WO | claimed |
| EP-1028460-A2 | Dual damascene misalignment tolerant techniques for vias and sacrificial etch segments | Applied Materials, Inc. (US) | 2000-08-16 | — | — | EP | claimed |
| WO-2000022671-A1 | METHOD OF MAKING DUAL DAMASCENE CONDUCTIVE INTERCONNECTIONS AND INTEGRATED CIRCUIT DEVICE COMPRISING SAME | ADVANCED MICRO DEVICES, INC. (US) | 2000-04-20 | — | — | WO | claimed |
| WO-2000021128-A1 | TECHNIQUES FOR TRIPLE AND QUADRUPLE DAMASCENE FABRICATION | APPLIED MATERIALS, INC. (US) | 2000-04-13 | — | — | WO | claimed |
| WO-2000010202-A1 | INTERCONNECT LINE FORMED BY DUAL DAMASCENE USING DIELECTRIC LAYERS HAVING DISSIMILAR ETCHING CHARACTERISTICS | APPLIED MATERIALS, INC. (US) | 2000-02-24 | — | — | WO | claimed |
| US-5217568-A | Silicon etching process using polymeric mask, for example, to form V-groove for an optical fiber coupling | MOTOROLA, INC. (US) | 1993-06-08 | — | — | US | claimed |
| US-8791881-B2 | Display device and manufacturing method therefor | PANASONIC CORPORATION (JP) | 2014-07-29 | — | — | US | disclosed |
| US-8389376-B2 | Air gap integration scheme | APPLIED MATERIALS, INC. (US) | 2013-03-05 | — | — | US | disclosed |
| EP-0911697-A2 | A fluorinated hard mask for micropatterning of polymers | INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW (BE) | 1999-04-28 | — | — | EP | disclosed |
| US-5217568-A | Silicon etching process using polymeric mask, for example, to form V-groove for an optical fiber coupling | MOTOROLA, INC. (US) | 1993-06-08 | — | — | US | disclosed |