Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ADH1B | P00325 | 1/20 | 0.33 |
| ▸ | ADH1A | P07327 | 1/20 | 0.33 |
| ▸ | ADH7 | P40394 | 1/20 | 0.33 |
| ▸ | CA1 | P00915 | 1/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
| ▸ | TSHR | P16473 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL233758 | 0.90 | ADH1B (0.35) | ADH1BADH1AADH7TSHR | |
| SCHEMBL234564 | 0.90 | ADH1B (0.35) | ADH1BADH1AADH7TSHR | |
| SCHEMBL232307 | 0.90 | ADH1B (0.35) | ADH1BADH1AADH7TSHR | |
| SCHEMBL235198 | 0.87 | TSHR (0.41) | ADH1BADH1AADH7CA1ALDH1A1 | |
| SCHEMBL234957 | 0.87 | TSHR (0.41) | ADH1BADH1AADH7CA1ALDH1A1 | |
| SCHEMBL234094 | 0.83 | — | — | |
| SCHEMBL232301 | 0.83 | — | — | |
| SCHEMBL231649 | 0.83 | — | — | |
| SCHEMBL235945 | 0.81 | EPHX1 (0.31) | — | |
| SCHEMBL233914 | 0.79 | TSHR (0.45) | ADH1BADH1AADH7CA1ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 255 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250313953-A1 | METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS | ASM IP HOLDING B.V. (NL) | 2025-10-09 | — | — | US | claimed |
| US-12378667-B2 | Methods and systems for forming doped silicon nitride films | ASM IP HOLDING B.V. (NL) | 2025-08-05 | — | — | US | claimed |
| US-12232327-B2 | Three-dimensional ferroelectric random-access memory (FeRAM) | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-02-18 | — | — | US | claimed |
| US-20230407477-A1 | SUBSTRATE PROCESSING APPARATUS INCLUDING IMPROVED EXHAUST STRUCTURE | ASM IP HOLDING B.V. (NL) | 2023-12-21 | — | — | US | claimed |
| US-20230147421-A1 | Three-Dimensional Ferroelectric Random-Access Memory (FeRAM) | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-05-11 | — | — | US | claimed |
| US-20230126516-A1 | METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS | ASM IP HOLDING B.V. (NL) | 2023-04-27 | — | — | US | claimed |
| US-20230089397-A1 | AIR GAP FORMING METHOD AND SELECTIVE DEPOSITION METHOD | ASM IP HOLDING B.V. (NL) | 2023-03-23 | — | — | US | claimed |
| EP-3428959-B1 | METHOD FOR PRODUCING SILICON NITRIDE FILM, AND SILICON NITRIDE FILM | TAIYO NIPPON SANSO CORP (JP) | 2023-03-01 | — | — | EP | claimed |
| US-20220282367-A1 | FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE | VERSUM MATERIALS US, LLC (US) | 2022-09-08 | — | — | US | claimed |
| EP-4013906-A1 | FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE | Versum Materials US, LLC (US) | 2022-06-22 | — | — | EP | claimed |
| US-20080242116-A1 | Method for forming strained silicon nitride films and a device containing such films | TOKYO ELECTRON LIMITED (JP) | 2008-10-02 | — | — | US | claimed |
| US-20080241388-A1 | Strained metal silicon nitride films and method of forming | TOKYO ELECTRON LIMITED (JP) | 2008-10-02 | — | — | US | claimed |
| US-20080081470-A1 | Method for forming strained silicon nitride films and a device containing such films | TOKYO ELECTRON LIMITED (JP) | 2008-04-03 | — | — | US | claimed |
| EP-1714315-A2 | NITRIDATION OF HIGH-K DIELECTRIC FILMS | Aviza Technology, Inc. (US) | 2006-10-25 | — | — | EP | claimed |
| US-20060062917-A1 | Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane | APPLIED MATERIALS, INC. | 2006-03-23 | — | — | US | claimed |
| US-20050239297-A1 | Growth of high-k dielectrics by atomic layer deposition | SENZAKI YOSHIHIDE | 2005-10-27 | — | — | US | claimed |
| US-20050153571-A1 | Nitridation of high-k dielectric films | AVIZA TECHNOLOGY, INC. | 2005-07-14 | — | — | US | claimed |
| WO-2005050715-A2 | NITRIDATION OF HIGH-K DIELECTRIC FILMS | AVIZA TECHNOLOGY, INC. (US) | 2005-06-02 | — | — | WO | claimed |
| EP-1523763-A2 | MOLECULAR LAYER DEPOSITION OF THIN FILMS WITH MIXED COMPONENTS | Aviza Technology, Inc. (US) | 2005-04-20 | — | — | EP | claimed |
| WO-2004010469-A2 | ATOMIC LAYER DEPOSITION OF MULTI-METALLIC PRECURSORS | AVIZA TECHNOLOGY, INC. (US) | 2004-01-29 | — | — | WO | claimed |