Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 1/20 | 0.55 |
| ▸ | POLB | P06746 | 1/20 | 0.55 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.55 |
| ▸ | GBA2 | Q9HCG7 | 1/20 | 0.47 |
| ▸ | GAA | P10253 | 1/20 | 0.46 |
| ▸ | THRB | P10828 | 1/20 | 0.43 |
| ▸ | ATM | Q13315 | 1/20 | 0.43 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.43 |
| ▸ | NAAA | Q02083 | 1/20 | 0.42 |
| ▸ | HRH2 | P25021 | 1/20 | 0.41 |
| ▸ | HRH1 | P35367 | 1/20 | 0.41 |
| ▸ | NOS3 | P29474 | 1/20 | 0.41 |
| ▸ | NOS2 | P35228 | 1/20 | 0.41 |
| ▸ | P2RY12 | Q9H244 | 2/20 | 0.41 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.41 |
| ▸ | CHRM1 | P11229 | 2/20 | 0.40 |
| ▸ | GNAI3 | P08754 | 1/20 | 0.40 |
| ▸ | GNAO1 | P09471 | 1/20 | 0.40 |
| ▸ | GNAI1 | P63096 | 1/20 | 0.40 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL184778 | 0.95 | LMNA (0.61) | LMNAPOLBSMN1; SMN2GBA2GAA | |
| SCHEMBL12311386 | 0.88 | GAA (0.50) | LMNAPOLBSMN1; SMN2GAATHRB | |
| SCHEMBL3652388 | 0.85 | LMNA (0.54) | LMNAPOLBSMN1; SMN2GBA2GAA | |
| SCHEMBL3652385 | 0.85 | LMNA (0.54) | LMNAPOLBSMN1; SMN2GBA2GAA | |
| SCHEMBL3708900 | 0.85 | LMNA (0.54) | LMNAPOLBSMN1; SMN2GBA2GAA | |
| SCHEMBL6129170 | 0.84 | POLB (0.64) | LMNAPOLBSMN1; SMN2GBA2NAAA | |
| SCHEMBL7449135 | 0.83 | POLB (0.63) | LMNAPOLBSMN1; SMN2GBA2GAA | |
| SCHEMBL5405182 | 0.82 | SMN1; SMN2 (0.62) | LMNAPOLBSMN1; SMN2GBA2L3MBTL1 | |
| SCHEMBL1219954 | 0.82 | GAA (0.65) | POLBSMN1; SMN2GAATHRBATM | |
| SCHEMBL7339506 | 0.81 | LMNA (0.61) | LMNAPOLBSMN1; SMN2GAATHRB |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9170488-B2 | Resist pattern-forming method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2015-10-27 | — | — | US | claimed |
| US-20140295350-A1 | RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORP (JP) | 2014-10-02 | — | — | US | claimed |
| WO-2024024801-A1 | RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND RADIATION-SENSITIVE ACID GENERATOR | JSR株式会社 | 2024-02-01 | — | — | WO | disclosed |
| WO-2023228847-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR株式会社 | 2023-11-30 | — | — | WO | disclosed |
| WO-2023228842-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR株式会社 | 2023-11-30 | — | — | WO | disclosed |
| WO-2023195255-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | JSR株式会社 | 2023-10-12 | — | — | WO | disclosed |
| WO-2023153059-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYMER | JSR株式会社 | 2023-08-17 | — | — | WO | disclosed |
| WO-2023153294-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR株式会社 | 2023-08-17 | — | — | WO | disclosed |
| WO-2023095561-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR株式会社 | 2023-06-01 | — | — | WO | disclosed |
| WO-2023095563-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR株式会社 | 2023-06-01 | — | — | WO | disclosed |
| WO-2023276538-A1 | RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER, AND COMPOUND | JSR株式会社 | 2023-01-05 | — | — | WO | disclosed |
| US-8703401-B2 | Method for forming pattern and developer | JSR CORPORATION (JP) | 2014-04-22 | — | — | US | disclosed |
| EP-2530525-B1 | Method for forming pattern and developer | JSR CORP (JP) | 2014-02-26 | — | — | EP | disclosed |
| US-20130224666-A1 | RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130089817-A1 | PHOTORESIST COMPOSITION AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-04-11 | — | — | US | disclosed |
| US-20130078571-A1 | PHOTORESIST COMPOSITION, METHOD FOR PRODUCING PHOTORESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2013-03-28 | — | — | US | disclosed |
| US-20120308938-A1 | METHOD FOR FORMING PATTERN AND DEVELOPER | JSR CORPORATION (JP) | 2012-12-06 | — | — | US | disclosed |
| EP-2530525-A1 | Method for forming pattern and developer | JSR Corporation (JP) | 2012-12-05 | — | — | EP | disclosed |
| EP-2356517-A2 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM Corporation (JP) | 2011-08-17 | — | — | EP | disclosed |
| WO-2010067905-A2 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-06-17 | — | — | WO | disclosed |