SCHEMBL2331008

SCHEMBL2331008

CCCCc1c(-c2ccc(N)cc2)ccc(N(CCCC)CCCC)c1CCCC

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 1/20 0.40
CNR1 P21554 1/20 0.36
CNR2 P34972 1/20 0.36
CYP3A4 P08684 2/20 0.33
LMNA P02545 1/20 0.33
CYP1A2 P05177 1/20 0.33
CHRM2 P08172 1/20 0.33
HTR1A P08908 1/20 0.33
GAA P10253 1/20 0.33
CYP2D6 P10635 1/20 0.33
DRD3 P35462 1/20 0.33
SCN1A P35498 1/20 0.33
SLC6A3 Q01959 1/20 0.33
KCNH2 Q12809 1/20 0.33
SCN2A Q99250 1/20 0.33
SCN3A Q9NY46 1/20 0.33
IDO1 P14902 1/20 0.32
CRHR1 P34998 8/20 0.32
PSMD14 O00487 1/20 0.32
ALDH1A1 P00352 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17141911 0.93 CNR1 (0.38) MAPTCNR1CNR2CYP3A4GAA
SCHEMBL27533901 0.79 SKP2 (0.42) MAPTCNR1CNR2CYP3A4LMNA
SCHEMBL27697128 0.78 CNR1 (0.42) MAPTCNR1CNR2CYP3A4LMNA
SCHEMBL5379073 0.76 SKP2 (0.40) MAPTCNR1CNR2CYP3A4LMNA
SCHEMBL5382796 0.76 SKP2 (0.40) MAPTCNR1CNR2CYP3A4LMNA
SCHEMBL434115 0.74 CNR1 (0.43) MAPTCNR1CNR2GAAALDH1A1
SCHEMBL5388052 0.74 SKP2 (0.41) MAPTCNR1CNR2CYP3A4LMNA
SCHEMBL28057457 0.73 CNR1 (0.45) MAPTCNR1CNR2GAAALDH1A1
SCHEMBL7596728 0.71 ALDH1A1 (0.44) MAPTCNR1CNR2CYP3A4GAA
SCHEMBL27461663 0.70 CYP3A4 (0.55) MAPTCNR2CYP3A4LMNACYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1764647-B1 Use of a positive resist composition for immersion exposure, positive resist composition and immersion lithographic pattern-forming method using the same FUJIFILM CORP (JP) 2011-08-17 EP disclosed
EP-1764647-A2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM Corporation (JP) 2007-03-21 EP disclosed