SCHEMBL2334997

SCHEMBL2334997

CCc1cc(C(=O)O)c(CC)cc1C(=O)O

nearest known ligand 0.55

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GABRP O00591 3/20 0.55
GABRD O14764 3/20 0.55
GABRA1 P14867 3/20 0.55
GABRB1 P18505 3/20 0.55
GABRG2 P18507 3/20 0.55
GABRB3 P28472 3/20 0.55
GABRA5 P31644 3/20 0.55
GABRA3 P34903 3/20 0.55
GABRA2 P47869 3/20 0.55
GABRB2 P47870 3/20 0.55
GABRA4 P48169 3/20 0.55
GABRE P78334 3/20 0.55
GABRA6 Q16445 3/20 0.55
GABRG1 Q8N1C3 3/20 0.55
GABRG3 Q99928 3/20 0.55
GABRQ Q9UN88 3/20 0.55
CLCN2 P51788 1/20 0.41
ALDH1A1 P00352 4/20 0.41
HSD17B10 Q99714 2/20 0.41
HMGB1 P09429 2/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4116012 0.89 GABRP (0.50) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL14273018 0.89 GABRP (0.47) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL18432461 0.85 GABRP (0.48) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL27411184 0.84 GABRP (0.47) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL21318041 0.84 GABRP (0.47) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL13244501 0.84 GABRP (0.47) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL20724874 0.83 GABRP (0.43) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL5154636 0.82 GABRP (0.46) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL12489052 0.82 GABRP (0.46) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL3526804 0.80 ALOX15 (0.47) GABRPGABRDGABRA1GABRB1GABRG2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 46 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110982083-B Microporous metal organic framework material used as getter of vacuum insulation board and synthetic method thereof 浙江华恒复合材料有限公司 2022-02-11 CN claimed
CN-110982083-A Microporous metal organic framework material used as getter of vacuum insulation board and synthetic method thereof 浙江华恒复合材料有限公司 2020-04-10 CN claimed
CN-122095316-A Composition for forming resist underlayer film 2026-05-26 CN disclosed
WO-2025095106-A1 RESIST UNDERLAYER FILM FORMATION COMPOSITION 日産化学株式会社 2025-05-08 WO disclosed
CN-114746468-B Method for producing polymer 日产化学株式会社 2024-09-13 CN disclosed
US-20230103242-A1 METHOD FOR PRODUCING POLYMER NISSAN CHEMICAL CORPORATION (JP) 2023-03-30 US disclosed
US-20230029997-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2023-02-02 US disclosed
US-11479627-B2 Film forming composition containing fluorine-containing surfactant NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2022-10-25 US disclosed
US-11459414-B2 Film forming composition containing fluorine-containing surfactant NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2022-10-04 US disclosed
CN-114761876-A Composition for forming resist underlayer film 日产化学株式会社 2022-07-15 CN disclosed
CN-114746468-A Method for producing polymer 日产化学株式会社 2022-07-12 CN disclosed
CN-101523292-A Method for manufacturing semiconductor device using quadruple-layer laminate NISSAN CHEMICAL IND LTD (JP) 2009-09-02 CN disclosed
EP-2085823-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE Nissan Chemical Industries, Ltd. (JP) 2009-08-05 EP disclosed
US-20080038678-A1 Condensation Type Polymer-Containing Anti-Reflective Coating For Semiconductor NISSAN CHEMICAL INDUSTRIES LTD. (JP) 2008-02-14 US disclosed
US-20080003524-A1 Sulfonate-Containing Anti-Reflective Coating Forming Composition for Lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-01-03 US disclosed
CN-101052919-A Sulfonate-containing composition for forming anti-reflective coating for lithography NISSAN CHEMICAL IND LTD (JP) 2007-10-10 CN disclosed
EP-1813987-A1 SULFONIC-ESTER-CONTAINING COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM FOR LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2007-08-01 EP disclosed
CN-1965268-A Antireflection film for semiconductor containing condensation type polymer NISSAN CHEMICAL IND LTD (JP) 2007-05-16 CN disclosed
EP-1757986-A1 ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER Nissan Chemical Industries, Ltd. (JP) 2007-02-28 EP disclosed
US-3994865-A MELT SPINNING CIBA-GEIGY CORPORATION (US) 1976-11-30 US disclosed