SCHEMBL23432948

SCHEMBL23432948

COC(=O)c1ccc(-c2cc(-c3ccc(C(=O)OC)cc3)c(S(=O)(=O)O)c(-c3ccc(C(=O)OC)cc3)c2)cc1

nearest known ligand 0.54

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
▸ CA1 P00915 7/20 0.54
▸ CA2 P00918 7/20 0.54
▸ CA12 O43570 6/20 0.54
▸ CA9 Q16790 6/20 0.54
▸ CA14 Q9ULX7 5/20 0.54
▸ EGFR P00533 1/20 0.52
▸ STS P08842 1/20 0.47
▸ PTGS2 P35354 1/20 0.47
▸ ERN1 O75460 3/20 0.46
▸ TDP1 Q9NUW8 1/20 0.44
▸ CA7 P43166 1/20 0.44
▸ PLAU P00749 2/20 0.44
▸ PTPN1 P18031 2/20 0.43
▸ PTPRC P08575 1/20 0.43
▸ PTPRF P10586 1/20 0.43
▸ CDC25B P30305 1/20 0.43
▸ HPGD P15428 1/20 0.43
▸ PTGS1 P23219 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23432774 0.94 EGFR (0.62) CA1CA2CA12CA9CA14
SCHEMBL21794097 0.84 CA12 (0.57) CA1CA2CA12CA9CA14
SCHEMBL16749646 0.80 EGFR (0.62) CA1CA2CA12CA9CA14
SCHEMBL24581543 0.79 CA12 (0.52) CA1CA2CA12CA9CA14
SCHEMBL16749645 0.79 CA1 (0.61) CA1CA2CA12CA9CA14
SCHEMBL10009170 0.79 CA1 (0.61) CA1CA2CA12CA9CA14
SCHEMBL21794146 0.79 SMN1; SMN2 (0.50) CA1CA2CA9PTGS2ERN1
SCHEMBL21182648 0.79 EGFR (0.56) CA1CA2CA12CA9CA14
SCHEMBL361378 0.78 PTGS2 (0.53) CA1CA2CA12CA9CA14
SCHEMBL23432950 0.78 SMN1; SMN2 (0.53) STSPTPN1HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023162837-A1 POSITIVE ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND COMPOUND 富士フイルム株式会社 2023-08-31 — — WO disclosed
WO-2023162838-A1 ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD 富士フイルム株式会社 2023-08-31 — — WO disclosed
WO-2023008347-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING ELECTRONIC DEVICE 富士フイルム株式会社 2023-02-02 — — WO disclosed
US-20210165325-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND FUJIFILM CORPORATION (JP) 2021-06-03 — — US disclosed
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