Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NPC1 | O15118 | 1/20 | 0.38 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.31 |
| ▸ | NAAA | Q02083 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL236795 | 0.98 | NPC1 (0.35) | NPC1TSHRL3MBTL1 | |
| SCHEMBL18804149 | 0.89 | HCRTR2 (0.33) | NPC1TSHR | |
| SCHEMBL11374005 | 0.85 | NPC1 (0.36) | NPC1NAAA | |
| SCHEMBL18561096 | 0.81 | GAA (0.40) | — | |
| SCHEMBL18561098 | 0.81 | L3MBTL1 (0.33) | TSHRL3MBTL1 | |
| SCHEMBL11369320 | 0.80 | NPC1 (0.33) | NPC1NAAA | |
| SCHEMBL18804143 | 0.77 | HCRTR2 (0.36) | — | |
| SCHEMBL725248 | 0.71 | TDP1 (0.46) | NPC1 | |
| SCHEMBL18179822 | 0.69 | GAA (0.33) | L3MBTL1 | |
| SCHEMBL723474 | 0.68 | TDP1 (0.47) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 62 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12242193-B2 | Coating compositions for use with an overcoated photoresist | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2025-03-04 | — | — | US | disclosed |
| US-20230418161-A1 | COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2023-12-28 | — | — | US | disclosed |
| US-11822248-B2 | Coating compositions for use with an overcoated photoresist | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2023-11-21 | — | — | US | disclosed |
| US-11822248-B2 | Coating compositions for use with an overcoated photoresist | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2023-11-21 | — | — | US | disclosed |
| US-11822248-B2 | Coating compositions for use with an overcoated photoresist | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2023-11-21 | — | — | US | disclosed |
| US-20230288809-A1 | COMPOSITION FOR RESIST UNDERLAYER AND PATTERN FORMATION METHOD USING SAME | SAMSUNG SDI CO., LTD. (KR) | 2023-09-14 | — | — | US | disclosed |
| US-20230288809-A1 | COMPOSITION FOR RESIST UNDERLAYER AND PATTERN FORMATION METHOD USING SAME | SAMSUNG SDI CO., LTD. (KR) | 2023-09-14 | — | — | US | disclosed |
| US-10788751-B2 | Coating composition for use with an overcoated photoresist | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2020-09-29 | — | — | US | disclosed |
| US-10444627-B2 | Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device | FUJIFILM CORPORATION (JP) | 2019-10-15 | — | — | US | disclosed |
| US-20180120706-A1 | PATTERN FORMING METHOD, LAMINATE, AND RESIST COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT | FUJIFILM CORPORATION (JP) | 2018-05-03 | — | — | US | disclosed |
| US-20120028196-A1 | METHOD OF FORMING PATTERN AND ORGANIC PROCESSING LIQUID FOR USE IN THE METHOD | FUJIFILM CORPORATION (JP) | 2012-02-02 | — | — | US | disclosed |
| US-20120003591-A1 | METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD | FUJIFILM CORPORATION (JP) | 2012-01-05 | — | — | US | disclosed |
| US-20110287234-A1 | NEGATIVE RESIST PATTERN FORMING METHOD, DEVELOPER AND NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION USED THEREFOR, AND RESIST PATTERN | FUJIFILM CORPORATION (JP) | 2011-11-24 | — | — | US | disclosed |
| EP-2384458-A1 | NEGATIVE RESIST PATTERN FORMING METHOD, DEVELOPER AND NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION USED THEREFOR, AND RESIST PATTERN | FUJIFILM Corporation (JP) | 2011-11-09 | — | — | EP | disclosed |
| WO-2011132764-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2011-10-27 | — | — | WO | disclosed |
| WO-2011102546-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2011-08-25 | — | — | WO | disclosed |
| WO-2011087144-A1 | PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2011-07-21 | — | — | WO | disclosed |
| WO-2011083872-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2011-07-14 | — | — | WO | disclosed |
| WO-2011043481-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2011-04-14 | — | — | WO | disclosed |
| WO-2010087516-A1 | NEGATIVE RESIST PATTERN FORMING METHOD, DEVELOPER AND NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION USED THEREFOR, AND RESIST PATTERN | FUJIFILM CORPORATION (JP) | 2010-08-05 | — | — | WO | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10788751-B2 | Coating composition for use with an overcoated photoresist | COL14A1, COPE, COL2A1 | NPC1 3305/4885TSHR 4343/4885L3MBTL1 4233/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.