SCHEMBL23494124

SCHEMBL23494124

CCCCCO[Si](OCCCCC)(OCCCCC)OC1CCCCC1

nearest known ligand 0.41

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
NAAA Q02083 3/20 0.41
CYP1A2 P05177 1/20 0.36
ALDH1A1 P00352 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
EPHX2 P34913 1/20 0.32
MEN1 O00255 1/20 0.31
THRB P10828 1/20 0.31
HTT P42858 1/20 0.31
KMT2A Q03164 1/20 0.31
MAPT P10636 1/20 0.31
EPHX1 P07099 2/20 0.30
SIGMAR1 Q99720 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28890647 0.91 NAAA (0.39) NAAACYP1A2EPHX1
SCHEMBL28417541 0.89 NAAA (0.37) NAAACYP1A2
SCHEMBL29217395 0.82 NAAA (0.33) NAAACYP1A2EPHX1
SCHEMBL28417471 0.80 CYP1A2 (0.33) NAAACYP1A2
SCHEMBL11205257 0.78 EPHX1 (0.34) NAAAEPHX1
SCHEMBL9723842 0.76 SIGMAR1 (0.41) SIGMAR1
Water SCHEMBL28105373 0.76 EPHX1 (0.33) NAAAEPHX1
SCHEMBL20720478 0.76 EPHX1 (0.31) EPHX1
SCHEMBL3886152 0.75 NAAA (0.36) NAAACYP1A2EPHX1
SCHEMBL677762 0.74 NAAA (0.47) NAAACYP1A2ALDH1A1TDP1EPHX2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12248251-B2 Silicon-containing resist underlayer film-forming composition including organic group having ammonium group NISSAN CHEMICAL CORPORATION (JP) 2025-03-11 US disclosed
US-11966164-B2 Semiconductor device production method employing silicon-containing resist underlayer film-forming composition including organic group having ammonium group NISSAN CHEMICAL CORPORATION (JP) 2024-04-23 US disclosed
US-20220373888-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION INCLUDING ORGANIC GROUP HAVING AMMONIUM GROUP NISSAN CHEMICAL CORPORATION (JP) 2022-11-24 US disclosed
US-20210181635-A1 SEMICONDUCTOR DEVICE PRODUCTION METHOD EMPLOYING SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION INCLUDING ORGANIC GROUP HAVING AMMONIUM GROUP NISSAN CHEMICAL CORPORATION (JP) 2021-06-17 US disclosed