⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ammonia Solution, Strong SCHEMBL31435101 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL1792060 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL7196231 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL6707374 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL6009880 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL8010695 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL2938012 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL5570086 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL1287588 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL342252 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 625 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11749598-B2 | Method for fabricating semiconductor device with test pad | NANYA TECHNOLOGY CORPORATION (TW) | 2023-09-05 | — | — | US | claimed |
| US-11705380-B2 | Method for fabricating semiconductor device with protection layers | NANYA TECHNOLOGY CORPORATION (TW) | 2023-07-18 | — | — | US | claimed |
| US-11587901-B2 | Semiconductor device with redistribution structure and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2023-02-21 | — | — | US | claimed |
| US-11557576-B2 | Method for fabricating semiconductor device with active interposer | NANYA TECHNOLOGY CORPORATION (TW) | 2023-01-17 | — | — | US | claimed |
| US-20220328401-A1 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH TEST PAD | NANYA TECHNOLOGY CORPORATION (TW) | 2022-10-13 | — | — | US | claimed |
| CN-115132684-A | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2022-09-30 | — | — | CN | claimed |
| US-11302608-B2 | Semiconductor device with protection layers and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2022-04-12 | — | — | US | claimed |
| US-20220013425-A1 | SEMICONDUCTOR DEVICE WITH PROTECTION LAYERS AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2022-01-13 | — | — | US | claimed |
| CN-113903723-A | Semiconductor element with multiple protective layers and preparation method thereof | 南亚科技股份有限公司 | 2022-01-07 | — | — | CN | claimed |
| US-20210398879-A1 | SEMICONDUCTOR DEVICE WITH PROTECTION LAYERS AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2021-12-23 | — | — | US | claimed |
| US-6524950-B1 | Method of fabricating copper damascene | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2003-02-25 | — | — | US | claimed |
| WO-2003009372-A2 | LOW RESISTIVITY TANTALUM NITRIDE/TANTALUM BILAYER STACK | APPLIED MATERIALS, INC. (US) | 2003-01-30 | — | — | WO | claimed |
| US-20020155660-A1 | Method for producing a microelectronic structure | INFINEON TECHNOLOGIES AG (DE) | 2002-10-24 | — | — | US | claimed |
| US-20020142581-A1 | Assembly including semiconductor chip, conductive pad, conductive trace, connection joint, and insulative adhesive; conductive trace includes routing line and pillar; connection joint contacts and electrically connects routing line and pad | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-10-03 | — | — | US | claimed |
| US-6436814-B1 | Interconnection structure and method for fabricating same | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-08-20 | — | — | US | claimed |
| CN-1343370-A | Method for manufacturing microelectronic structure | INFINEON TECHNOLOGIES AG (DE) | 2002-04-03 | — | — | CN | claimed |
| US-6221780-B1 | Dual damascene flowable oxide insulation structure and metallic barrier | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2001-04-24 | — | — | US | claimed |
| US-20010000115-A1 | Dual damascene flowable oxide insulation structure and metallic barrier | GOOGLE LLC | 2001-04-05 | — | — | US | claimed |
| US-6181013-B1 | Method for selective growth of Cu3Ge or Cu5Si for passivation of damascene copper structures and device manufactured thereby | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2001-01-30 | — | — | US | claimed |
| US-6046108-A | Method for selective growth of Cu3 Ge or Cu5 Si for passivation of damascene copper structures and device manufactured thereby | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2000-04-04 | — | — | US | claimed |