Zinc Ion

Zinc Ion

SCHEMBL2350868

[In+3].[In+3].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[W+6].[W+6].[Zn+2].[Zn+2]

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Zinc Ion SCHEMBL29395959 0.87
SCHEMBL406894 0.87
Zinc Ion SCHEMBL29350087 0.87
Zinc Ion SCHEMBL2898281 0.87
Zinc Ion SCHEMBL19272482 0.87
Zinc Ion SCHEMBL24564 0.87
Zinc Ion SCHEMBL29630377 0.87
Zinc Ion SCHEMBL30088527 0.87
Zinc Ion SCHEMBL36518 0.75
Zinc Ion SCHEMBL2419645 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 333 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250374641-A1 TRANSISTOR STRUCTURES AND METHODS FOR FORMING THE SAME TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2025-12-04 US claimed
CN-115050762-B Semiconductor device and method for manufacturing the same 友达光电股份有限公司 2025-06-03 CN claimed
US-12317596-B2 Semiconductor device and manufacturing method thereof AUO Corporation (TW) 2025-05-27 US claimed
US-12290010-B2 Method for manufacturing a conductive bridging memory device NATIONAL YANG MING CHIAO TUNG UNIVERSITY (TW) 2025-04-29 US claimed
CN-115101543-B Semiconductor device and method for manufacturing the same 友达光电股份有限公司 2025-04-18 CN claimed
CN-115050761-B Semiconductor device and method for manufacturing the same 友达光电股份有限公司 2025-02-07 CN claimed
US-20240431116-A1 FEFET DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2024-12-26 US claimed
CN-115050838-B Semiconductor device and method for manufacturing the same 友达光电股份有限公司 2024-12-24 CN claimed
US-12176433-B2 Polarization enhancement structure for enlarging memory window TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2024-12-24 US claimed
US-20240234619-A1 METHOD FOR MANUFACTURING TRANSPARENT THIN FILM TRANSISTOR-BASED PHOTOSENSITIVE DEVICE NATIONAL YANG MING CHIAO TUNG UNIVERSITY (TW) 2024-07-11 US claimed
CN-104699285-B Touch-control sensing structure and forming method thereof 宸鸿科技(厦门)有限公司 2017-11-21 CN claimed
CN-104699285-A Touch sensing structure and forming method thereof TPK TOUCH SOLUTIONS XIAMEN INC 2015-06-10 CN claimed
CN-203773502-U Touch control sensing structure TPK TOUCH SOLUTIONS XIAMEN INC 2014-08-13 CN claimed
US-8481362-B2 Thin film transistor and method for preparing the same LG CHEM, LTD. (KR) 2013-07-09 US claimed
US-8174175-B2 Light-emitting device and method for manufacturing same CASIO COMPUTER CO., LTD. (JP) 2012-05-08 US claimed
CN-101355835-B Light emitting device and method for manufacturing light emitting device CASIO COMPUTER CO.,LTD. (JP) 2011-12-28 CN claimed
US-20100117085-A1 THIN FILM TRANSISTOR AND METHOD FOR PREPARING THE SAME LG DISPLAY CO., LTD. (KR) 2010-05-13 US claimed
US-20090026469-A1 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME CASIO COMPUTER CO., LTD. (JP) 2009-01-29 US claimed
CN-101355835-A Light emitting device and method for manufacturing light emitting device CASIO COMPUTER CO LTD (JP) 2009-01-28 CN claimed
WO-2008133457-A1 THIN FILM TRANSISTOR AND METHOD FOR PREPARING THE SAME LG CHEM, LTD. (KR) 2008-11-06 WO claimed