SCHEMBL2353501

SCHEMBL2353501

C#Cc1ccccc1-c1ccccc1CCCC

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NR1H2 P55055 1/20 0.39
NR1H3 Q13133 1/20 0.39
LIPG Q9Y5X9 1/20 0.39
CYP3A4 P08684 1/20 0.36
CYP2D6 P10635 1/20 0.36
CYP2C9 P11712 1/20 0.36
TLR8 Q9NR97 1/20 0.34
PPARA Q07869 1/20 0.33
DRD2 P14416 1/20 0.33
DRD4 P21917 1/20 0.33
DRD3 P35462 1/20 0.33
ELANE P08246 1/20 0.33
CTSG P08311 1/20 0.33
GPR3 P46089 1/20 0.33
TYR P14679 1/20 0.33
CYSLTR2 Q9NS75 1/20 0.32
CYSLTR1 Q9Y271 1/20 0.32
ALOX5 P09917 1/20 0.32
PTGS2 P35354 1/20 0.32
CNR2 P34972 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL668402 0.85 LIPG (0.43) NR1H2NR1H3LIPGCYP3A4CYP2D6
SCHEMBL2701240 0.83 LIPG (0.50) NR1H2NR1H3LIPGCYP3A4CYP2D6
SCHEMBL14302123 0.83 TSHR (0.41) NR1H2NR1H3LIPGCYP3A4CYP2D6
SCHEMBL2774096 0.80 LIPG (0.50) NR1H2NR1H3LIPGTLR8PPARA
SCHEMBL31529667 0.79 LIPG (0.53) NR1H2NR1H3LIPGCYP3A4PPARA
SCHEMBL2350389 0.79 LIPG (0.53) NR1H2NR1H3LIPGCYP3A4PPARA
SCHEMBL365485 0.78 LIPG (0.45) NR1H2NR1H3LIPGPPARAGPR3
SCHEMBL4952215 0.77 LIPG (0.36) LIPGCYP3A4CYP2D6CYP2C9TLR8
SCHEMBL1024526 0.77 LIPG (0.59) NR1H2NR1H3LIPGTLR8PPARA
SCHEMBL1641623 0.77 LIPG (0.47) NR1H2NR1H3LIPGGPR3CYSLTR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9620714-B2 Method for forming pattern, method for manufacturing light emitting device, and light emitting device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2017-04-11 US disclosed
US-8752940-B2 Method of manufacturing a light emitting device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2014-06-17 US disclosed
US-20140132654-A1 METHOD OF MANUFACTURING A LIGHT EMITTING DEVICE SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2014-05-15 US disclosed
US-8632166-B2 Printing device and method of manufacturing a light emitting device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2014-01-21 US disclosed
US-8425016-B2 Method of manufacturing a light emitting device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2013-04-23 US disclosed
US-20120227664-A1 METHOD OF MANUFACTURING A LIGHT EMITTING DEVICE SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2012-09-13 US disclosed
US-8197052-B2 Method of manufacturing a light emitting device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2012-06-12 US disclosed
US-8017422-B2 Method for forming pattern, method for manufacturing light emitting device, and light emitting device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2011-09-13 US disclosed
US-7994711-B2 Light emitting device and manufacturing method thereof SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2011-08-09 US disclosed
US-20100149286-A1 PRINTING DEVICE AND METHOD OF MANUFACTURING A LIGHT EMITTING DEVICE SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2010-06-17 US disclosed
US-7378291-B2 Method of manufacturing a light emitting device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2008-05-27 US disclosed
CN-100377381-C Method for manufacturing luminous device SEMICONDUCTOR ENERGY LAB (JP) 2008-03-26 CN disclosed
US-20080026501-A1 Method of manufacturing a light emitting device SEMICONDUCTOR ENERGY LABORATORY CO. LTD. (JP) 2008-01-31 US disclosed
EP-1753029-A2 Light emitting device and manufacturing method SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2007-02-14 EP disclosed
US-20070029929-A1 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2007-02-08 US disclosed
US-7063869-B2 Printing device and method of manufacturing a light emitting device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2006-06-20 US disclosed
US-20050037137-A1 ink jet printing; first and second piezoelectric elements are incorporated into the ink head, and the timings for causing displacement are synchronized, whereby the mixture can be discharged continuously, or the discharge can be stopped instantaneously SEMICONDUCTOR ENERGY LABORATORY (JP) 2005-02-17 US disclosed
CN-1396792-A Method for manufacturing luminous device SEMICONDUCTOR ENERGY LAB (JP) 2003-02-12 CN disclosed
US-20030010283-A1 Printing device and method of manufacturing a light emitting device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2003-01-16 US disclosed
US-20030008429-A1 Method of manufacturing a light emitting device SEMICONDUCTOR ENERGY LABORATORY CO., INC. (JP) 2003-01-09 US disclosed