Citric Acid

Citric Acid

SCHEMBL235474

O=C([O-])CC(O)(CC(=O)[O-])C(=O)[O-].[In+3]

nearest known ligand 0.89

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

GSK3AGSK3BHRH2IMPA1

The experimentally established mechanism targets of Citric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
CA4 P22748 3/20 0.89
ALDH1A1 P00352 1/20 0.33
CASP1 P29466 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Citric Acid SCHEMBL1291555 0.97 CA4 (0.94) CA4ALDH1A1CASP1
Citric Acid SCHEMBL42945 0.97 CA4 (0.94) CA4ALDH1A1CASP1
Citric Acid SCHEMBL22686437 0.97 CA4 (0.94) CA4ALDH1A1CASP1
Citric Acid SCHEMBL29587574 0.97 CA4 (0.94) CA4ALDH1A1CASP1
Citric Acid SCHEMBL23012792 0.94 CA4 (0.89) CA4ALDH1A1CASP1
Citric Acid SCHEMBL21555662 0.94 CA4 (0.89) CA4ALDH1A1CASP1
Citric Acid SCHEMBL66313 0.94 CA4 (0.89) CA4ALDH1A1CASP1
Citric Acid SCHEMBL20668547 0.94 CA4 (0.89) CA4ALDH1A1CASP1
Citric Acid SCHEMBL8042141 0.94 CA4 (0.89) CA4ALDH1A1CASP1
Citric Acid SCHEMBL566646 0.94 CA4 (0.89) CA4ALDH1A1CASP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 118 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119236710-B Copper-based disinfectant composite functional film material and preparation method and application thereof 浙江工业大学 2025-06-17 CN claimed
CN-119281143-B Carbon-based self-cleaning membrane material for efficiently separating oil-water emulsion and preparation method and application thereof 浙江工业大学 2025-05-30 CN claimed
CN-119372728-A Gold indium electroplating process and preparation method thereof 南京科技职业学院 2025-01-28 CN claimed
CN-119281143-A Carbon-based self-cleaning membrane material for efficiently separating oil-water emulsion and preparation method and application thereof 浙江工业大学 2025-01-10 CN claimed
CN-119236710-A Copper-based disinfectant composite functional film material and preparation method and application thereof 浙江工业大学 2025-01-03 CN claimed
CN-116099550-B Non-noble metal copper modified carbon-based composite material and preparation method and application thereof 浙江工业大学 2024-11-12 CN claimed
CN-118751156-A Spray pyrolysis system and application thereof 广东邦普循环科技有限公司 2024-10-11 CN claimed
CN-115739119-B Copper particle-loaded sulfur-zinc-indium composite material and preparation method and application thereof 浙江工业大学 2024-05-10 CN claimed
CN-116099550-A Non-noble metal copper modified carbon-based composite material and preparation method and application thereof 浙江工业大学 2023-05-12 CN claimed
CN-115739119-A Copper particle-loaded sulfur-zinc-indium composite material and preparation method and application thereof 浙江工业大学 2023-03-07 CN claimed
CN-112275297-A Bulk indium sulfide-carbon fiber network photocatalyst and preparation method and application thereof 齐鲁工业大学 2021-01-29 CN claimed
CN-108039476-B Nano indium oxide/carbon composite material and preparation method thereof 中南大学 2020-05-12 CN claimed
US-9224599-B2 P-type metal oxide semiconductor material and method for fabricating the same INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) 2015-12-29 US claimed
US-20150187573-A1 P-TYPE METAL OXIDE SEMICONDUCTOR MATERIAL AND METHOD FOR FABRICATING THE SAME INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) 2015-07-02 US claimed
US-8529802-B2 Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2013-09-10 US claimed
US-8319300-B2 Solution composition for forming oxide thin film and electronic device including the oxide thin film SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-11-27 US claimed
US-20120034492-A1 ELECTROLESS COATED DISKS FOR HIGH TEMPERATURE APPLICATIONS AND METHODS OF MAKING THE SAME COVENTYA, INC. (US) 2012-02-09 US claimed
US-20100258793-A1 Solution composition for forming oxide thin film and electronic device including the oxide thin film INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY (KR) 2010-10-14 US claimed
US-20100210069-A1 Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-08-19 US claimed
US-4448763-A RADIOACTIVE GALLIUM AND NON-RADIOACTIVE INDIUM THE UNIVERSITY OF KENTUCKY RESEARCH FOUNDATION (US) 1984-05-15 US claimed