SCHEMBL2361005

SCHEMBL2361005

OC=CCc1ccc(O)cc1O

nearest known ligand 0.56

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
TYR P14679 6/20 0.56
ALOX5 P09917 3/20 0.46
MEN1 O00255 2/20 0.43
MAPT P10636 2/20 0.43
KMT2A Q03164 2/20 0.43
TP53 P04637 1/20 0.43
CYP3A4 P08684 1/20 0.43
ALOX15 P16050 1/20 0.43
TSHR P16473 1/20 0.43
HTT P42858 1/20 0.43
TDP1 Q9NUW8 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9744031 0.82 TYR (0.54) TYRALOX5MEN1MAPTKMT2A
SCHEMBL9744034 0.82 TYR (0.54) TYRALOX5MEN1MAPTKMT2A
SCHEMBL3749697 0.78 TYR (0.60) TYRALOX5MEN1MAPTKMT2A
SCHEMBL69697 0.77 TYR (0.58) TYRALOX5MEN1MAPTKMT2A
SCHEMBL3749696 0.77 TYR (0.58) TYRALOX5MEN1MAPTKMT2A
SCHEMBL933119 0.77 TYR (0.58) TYRALOX5MEN1MAPTKMT2A
SCHEMBL30513627 0.77 TYR (0.58) TYRALOX5MEN1MAPTKMT2A
SCHEMBL9743227 0.76 KDM4E (0.54) TYRALOX5MEN1MAPTKMT2A
SCHEMBL30555743 0.76 KDM4E (0.54) TYRALOX5MEN1MAPTKMT2A
SCHEMBL9743231 0.76 KDM4E (0.54) TYRALOX5MEN1MAPTKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20110207326-A1 SLURRY FOR POLISHING AND PLANARIZATION METHOD OF INSULATING LAYER USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-08-25 US claimed
CN-106867411-B Slurry composition for chemical mechanical polishing, method for producing the same, polishing method, method for manufacturing semiconductor device, and polishing apparatus 三星电子株式会社 2021-04-06 CN disclosed
US-10829690-B2 Slurry composition for chemical mechanical polishing, method of preparing the same, and method of fabricating semiconductor device by using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2020-11-10 US disclosed
CN-110872472-A Slurry composition, method of preparing the same, and method of manufacturing semiconductor device using the same 三星电子株式会社 2020-03-10 CN disclosed
US-20200071613-A1 SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING, METHOD OF PREPARING THE SAME, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE BY USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2020-03-05 US disclosed
US-20170107404-A1 SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING, METHOD OF PREPARING THE SAME, AND POLISHING METHOD USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2017-04-20 US disclosed
US-8546261-B2 Slurry for polishing and planarization method of insulating layer using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2013-10-01 US disclosed
US-20110207326-A1 SLURRY FOR POLISHING AND PLANARIZATION METHOD OF INSULATING LAYER USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-08-25 US disclosed