⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL430914 | 1.00 | — | — | |
| SCHEMBL23709 | 1.00 | — | — | |
| SCHEMBL28669843 | 1.00 | — | — | |
| SCHEMBL428692 | 1.00 | — | — | |
| SCHEMBL427351 | 1.00 | — | — | |
| SCHEMBL17707724 | 1.00 | — | — | |
| SCHEMBL28793381 | 1.00 | — | — | |
| SCHEMBL3760803 | 1.00 | — | — | |
| SCHEMBL23673298 | 0.82 | — | — | |
| SCHEMBL21380724 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1657 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12309999-B2 | Semiconductor structure and manufacturing method thereof | CHANGXIN MEMORY TECHNOLOGIES, INC. (CN) | 2025-05-20 | — | — | US | claimed |
| US-20250040226-A1 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Institute of Microelectronics, Chinese Academy of Sciences (CN) | 2025-01-30 | — | — | US | claimed |
| EP-3320562-B1 | FORMULATIONS TO SELECTIVELY ETCH SILICON GERMANIUM RELATIVE TO GERMANIUM | ENTEGRIS INC (US) | 2024-08-28 | — | — | EP | claimed |
| EP-4333023-A1 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR | Changxin Memory Technologies, Inc. (CN) | 2024-03-06 | — | — | EP | claimed |
| EP-4322230-A1 | APD, PREPARATION METHOD FOR APD, DETECTOR AND LASER RADAR SYSTEM | Huawei Technologies Co., Ltd. (CN) | 2024-02-14 | — | — | EP | claimed |
| EP-3971990-B1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME | CHANGXIN MEMORY TECH INC (CN) | 2023-12-13 | — | — | EP | claimed |
| US-20230389278-A1 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF | CHANGXIN MEMORY TECHNOLOGIES, INC. (CN) | 2023-11-30 | — | — | US | claimed |
| CN-115938969-A | Epitaxial layer film quality detection method | 江苏天芯微半导体设备有限公司 | 2023-04-07 | — | — | CN | claimed |
| WO-2023029401-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME | 长鑫存储技术有限公司 | 2023-03-09 | — | — | WO | claimed |
| EP-3971990-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME | Changxin Memory Technologies, Inc. (CN) | 2022-03-23 | — | — | EP | claimed |
| US-20040061199-A1 | Etching metal using sonication | INTEL CORPORATION | 2004-04-01 | — | — | US | claimed |
| CN-1452225-A | Insulation grid film transistor and control system thereof | SEIKO INSTR INC (JP) | 2003-10-29 | — | — | CN | claimed |
| CN-1435868-A | Method for manufacturing MOS transistor with low grid depletion phenomenon | WANGHONG ELECTRONICS CO LTD (CN) | 2003-08-13 | — | — | CN | claimed |
| CN-1435869-A | Method for manufacturing shallow junction MOS transistor | WANGHONG ELECTRONICS CO LTD (CN) | 2003-08-13 | — | — | CN | claimed |
| CN-1420549-A | Double-bit fast memory structure and manufacturing method thereof | WANGHONG ELECTRONICS CO LTD (CN) | 2003-05-28 | — | — | CN | claimed |
| CN-1396639-A | Method for preventing gate depletion phenomenon of MOS transistor | WANGHONG ELECTRONICS CO LTD (CN) | 2003-02-12 | — | — | CN | claimed |
| CN-1396651-A | Method for manufacturing NMOS and PMOS with symmetrical threshold voltage | WANGHONG ELECTRONICS CO LTD (CN) | 2003-02-12 | — | — | CN | claimed |
| CN-1388589-A | Enhanced NMOS and PMOS transister with transport factor of strain Si/SiGe layer on silicon insulator (SOI) substrate | SHARP KK (JP) | 2003-01-01 | — | — | CN | claimed |
| EP-0317350-B1 | A pin function photovoltaic element, tandem und triple cells | CANON KK (JP) | 1995-06-21 | — | — | EP | claimed |
| US-5216491-A | Semiconductor photoconductive device with laminated refractory metal electrode | FUJI XEROX CO., LTD. (JP) | 1993-06-01 | — | — | US | claimed |