SCHEMBL23843751

SCHEMBL23843751

O=C(OC1CC2CC1CC2C(=O)OCCNS(=O)(=O)C(F)(F)F)c1cc(I)cc(I)c1I

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL26068002 0.88 — —
SCHEMBL21911814 0.82 — —
SCHEMBL19756177 0.81 — —
SCHEMBL23843750 0.81 — —
SCHEMBL23830055 0.80 HDAC3 (0.36) —
SCHEMBL23843672 0.76 HDAC3 (0.33) —
SCHEMBL19678504 0.75 — —
SCHEMBL23843670 0.75 HDAC3 (0.34) —
SCHEMBL23843639 0.74 HDAC3 (0.37) —
SCHEMBL22403232 0.74 SCN9A (0.30) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11860540-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-02 — — US disclosed
US-11733608-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-22 — — US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 — — US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 — — US disclosed
US-20210364921-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-11-25 — — US disclosed
US-20210294211-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-09-23 — — US disclosed
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