SCHEMBL23843750

SCHEMBL23843750

O=C(OC1CCC(C(=O)OCCNS(=O)(=O)C(F)(F)F)CC1)c1cc(I)cc(I)c1I

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL26068000 0.88 POLB (0.31) —
SCHEMBL23843643 0.85 CNR2 (0.31) —
SCHEMBL23830055 0.82 HDAC3 (0.36) —
SCHEMBL23843635 0.82 CNR2 (0.33) —
SCHEMBL26343818 0.82 VCP (0.35) —
SCHEMBL19756170 0.81 — —
SCHEMBL21911813 0.81 HDAC3 (0.30) —
SCHEMBL23843751 0.81 — —
SCHEMBL24054812 0.79 PGR (0.39) —
SCHEMBL23843672 0.78 HDAC3 (0.33) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11860540-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-02 — — US disclosed
US-11733608-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-22 — — US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 — — US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 — — US disclosed
US-20210364921-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-11-25 — — US disclosed
US-20210294211-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-09-23 — — US disclosed
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