SCHEMBL2400152

SCHEMBL2400152

CC(C)C[Si](OC(C)C)(OC(C)C)OC(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9163079 0.86
SCHEMBL7929989 0.79
SCHEMBL12098909 0.77
SCHEMBL28536697 0.77 ALDH1A1 (0.33)
SCHEMBL2947516 0.75
SCHEMBL2953302 0.75
SCHEMBL7936202 0.75
SCHEMBL2400354 0.75
SCHEMBL7933463 0.75
SCHEMBL22534483 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 110 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260118767-A1 REVERSE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-30 US disclosed
EP-4700067-A1 COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPERSTRATE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-25 EP disclosed
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-12 US disclosed
EP-4692941-A2 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-02-11 EP disclosed
US-20260029706-A1 COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-29 US disclosed
EP-4621486-A2 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-24 EP disclosed
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-18 US disclosed
EP-4592299-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-30 EP disclosed
US-20250237953-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-24 US disclosed
WO-2024190380-A1 SILICON-CONTAINING RESIN COMPOSITION PURIFIED PRODUCT MANUFACTURING METHOD, PATTERN FORMATION METHOD, AND SILICON-CONTAINING RESIN COMPOSITION PURIFIED PRODUCT 東京応化工業株式会社 2024-09-19 WO disclosed
US-20060183055-A1 Method for defining a feature on a substrate VERSUM MATERIALS US, LLC 2006-08-17 US disclosed
EP-1691410-A2 Method for defining a feature on a substrate Air Products and Chemicals, Inc. (US) 2006-08-16 EP disclosed
US-20050260420-A1 Low dielectric materials and methods for making same VERSUM MATERIALS US, LLC 2005-11-24 US disclosed
EP-1583141-A2 Solvents and methods using same for removing silicon-containing residues from a substrate AIR PRODUCTS AND CHEMICALS, INC. (US) 2005-10-05 EP disclosed
EP-1577935-A2 Compositions for preparing low dielectric materials containing solvents AIR PRODUCTS AND CHEMICALS, INC. (US) 2005-09-21 EP disclosed
US-20050196974-A1 Compositions for preparing low dielectric materials containing solvents VERSUM MATERIALS US, LLC 2005-09-08 US disclosed
US-20050196535-A1 Solvents and methods using same for removing silicon-containing residues from a substrate AIR PRODUCTS AND CHEMICALS, INC. 2005-09-08 US disclosed
EP-1464410-A1 Low dielectric materials and methods for making same AIR PRODUCTS AND CHEMICALS, INC. (US) 2004-10-06 EP disclosed
US-20040048960-A1 Compositions for preparing low dielectric materials AIR PRODUCTS AND CHEMICALS, INC. 2004-03-11 US disclosed
EP-1376671-A1 Compositions for preparing materials with a low dielectric constant AIR PRODUCTS AND CHEMICALS, INC. (US) 2004-01-02 EP disclosed