SCHEMBL2953302

SCHEMBL2953302

CC(C)C[Si](CC(C)C)(CC(C)C)OC(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2400152 0.75
SCHEMBL2947516 0.75
SCHEMBL2956413 0.75
SCHEMBL28697169 0.73
SCHEMBL10456904 0.73
SCHEMBL247749 0.71
SCHEMBL966922 0.71
SCHEMBL9634415 0.71
SCHEMBL9163079 0.69
SCHEMBL5833653 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20100283133-A1 FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE HAMADA YOSHITAKA 2010-11-11 US disclosed
US-20100233482-A1 Organic silicon oxide fine particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device HAMADA YOSHITAKA 2010-09-16 US disclosed
US-7786022-B2 Method for forming insulating film with low dielectric constant SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-08-31 US disclosed
US-7754330-B2 Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-07-13 US disclosed
US-20090294726-A1 ORGANIC SILICON OXIDE FINE PARTICLES AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-03 US disclosed
US-20090294922-A1 ORGANIC SILICON OXIDE FINE PARTICLE AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE PANASONIC CORPORATION (JP) 2009-12-03 US disclosed
US-20080290521-A1 FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE SHIN ETSU CHEMICAL CO., LTD. 2008-11-27 US disclosed
US-20080292863-A1 SILOXANE POLYMER, PREPARATION METHOD THEREOF, POROUS-FILM FORMING COATING SOLUTION CONTAINING THE POLYMER, POROUS FILM, AND SEMICONDUCTOR DEVICE USING THE POROUS FILM SHIN ETSU CHEMICAL CO., LTD. 2008-11-27 US disclosed