Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 4/20 | 0.42 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.42 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.42 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.42 |
| ▸ | TBXA2R | P21731 | 1/20 | 0.42 |
| ▸ | CA1 | P00915 | 4/20 | 0.41 |
| ▸ | CA2 | P00918 | 4/20 | 0.41 |
| ▸ | CA7 | P43166 | 3/20 | 0.41 |
| ▸ | MAPT | P10636 | 3/20 | 0.41 |
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.41 |
| ▸ | GALR3 | O60755 | 1/20 | 0.41 |
| ▸ | BLM | P54132 | 1/20 | 0.41 |
| ▸ | CA9 | Q16790 | 3/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.38 |
| ▸ | CA4 | P22748 | 2/20 | 0.33 |
| ▸ | USP2 | O75604 | 2/20 | 0.32 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.32 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | RECQL | P46063 | 1/20 | 0.32 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Acetaldehyde SCHEMBL11123828 | 0.95 | TSHR (0.39) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| SCHEMBL562466 | 0.93 | TSHR (0.38) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| SCHEMBL170338 | 0.93 | TSHR (0.38) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| SCHEMBL8606001 | 0.87 | TSHR (0.39) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| SCHEMBL8039306 | 0.86 | TDP1 (0.33) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| Acetic Acid Butyl Ester SCHEMBL7174699 | 0.85 | ALDH1A1 (0.50) | TSHRMAPTSMN1; SMN2TDP1USP2 | |
| SCHEMBL7083659 | 0.85 | CA1 (0.41) | TSHRCA1CA2CA7CA9 | |
| SCHEMBL29757318 | 0.84 | TDP1 (0.36) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| SCHEMBL8039304 | 0.84 | ALDH1A1 (0.36) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| SCHEMBL2187422 | 0.84 | TSHR (0.43) | TSHRCA1CA2CA7CA9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 2212 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118244576-A | Photosensitive resin composition and cured film thereof | 罗门哈斯电子材料韩国有限公司 | 2024-06-25 | — | — | CN | claimed |
| CN-117777455-B | Fluorine-containing polysiloxane, preparation method thereof, photoresist composition and application thereof | 山东同益光刻胶材料科技有限公司 | 2024-05-10 | — | — | CN | claimed |
| CN-117777455-A | Fluorine-containing polysiloxane, preparation method thereof, photoresist composition and application thereof | 山东同益光刻胶材料科技有限公司 | 2024-03-29 | — | — | CN | claimed |
| US-11920069-B2 | Compositions containing semiconducting nanoparticles, and polymer or composite layers formed therefrom, and optical devices | MERCK PATENT GMBH (DE) | 2024-03-05 | — | — | US | claimed |
| CN-117624471-A | Photoresist film-forming resin and preparation method thereof | 广东粤港澳大湾区黄埔材料研究院 | 2024-03-01 | — | — | CN | claimed |
| CN-117106128-A | Fluorine-containing acrylate polymer, preparation method thereof, fluorinated polymer photoresist material and application thereof | 吉林大学 | 2023-11-24 | — | — | CN | claimed |
| US-20230343582-A1 | SPIN ON CARBON COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-10-26 | — | — | US | claimed |
| CN-115785455-B | Polyphosphate film-forming resin and photoresist composition | 广东粤港澳大湾区黄埔材料研究院 | 2023-10-10 | — | — | CN | claimed |
| US-11746284-B2 | Composition comprising a semiconducting light emitting nanoparticle | MERCK PATENT GMBH (DE) | 2023-09-05 | — | — | US | claimed |
| US-11728161-B2 | Spin on carbon composition and method of manufacturing a semiconductor device | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-08-15 | — | — | US | claimed |
| EP-0416873-A2 | Transparent dissolution rate modifiers for photoresists | HOECHST CELANESE CORPORATION (US) | 1991-03-13 | — | — | EP | claimed |
| EP-0410794-A2 | Maleimide containing, negative working deep UV photoresist | HOECHST CELANESE CORPORATION (US) | 1991-01-30 | — | — | EP | claimed |
| EP-0220645-B1 | PHOTOSENSITIVE POSITIVE COMPOSITION AND PHOTORESIST MATERIAL PREPARED THEREWITH | HOECHST CELANESE CORPORATION (US) | 1990-09-12 | — | — | EP | claimed |
| US-4948697-A | IMPROVED ODOR AND INCREASED PHTOSPEED | HOECHST CELANESE CORPORATION (US) | 1990-08-14 | — | — | US | claimed |
| US-4931381-A | Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment | HOECHST CELANESE CORPORATION (US) | 1990-06-05 | — | — | US | claimed |
| EP-0221428-B1 | LIQUID FOR THE TREATMENT OF A PHOTORESIST COMPOSITION, AND PROCESS THEREFOR | HOECHST CELANESE CORPORATION (US) | 1989-11-23 | — | — | EP | claimed |
| US-4863827-A | O-QUINONE DIAZIDE | AMERICAN HOECHST CORPORATION (US) | 1989-09-05 | — | — | US | claimed |
| EP-0226741-B1 | PROCESS FOR PRODUCING A POSITIVE PHOTORESIST | HOECHST CELANESE CORPORATION (US) | 1989-08-02 | — | — | EP | claimed |
| EP-0260994-A2 | Process for producing integrated circuit | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1988-03-23 | — | — | EP | claimed |
| US-4550069-A | PHOTOSPEED INCREASED | AMERICAN HOECHST CORPORATION (US) | 1985-10-29 | — | — | US | claimed |