SCHEMBL245696

SCHEMBL245696

[Ga+3].[Ga+3].[Ga+3].[Ga+3].[Ga+3].[Ga+3].[Ga+3].[Ga+3].[Ga+3].[N-3].[N-3].[N-3].[N-3].[N-3].[N-3].[N-3].[N-3].[N-3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15991 1.00
SCHEMBL4623005 1.00
SCHEMBL4198002 0.82
SCHEMBL7941410 0.82
SCHEMBL1401312 0.82
SCHEMBL18835183 0.82
SCHEMBL349297 0.82
SCHEMBL4300171 0.82
SCHEMBL14958359 0.82
SCHEMBL17458658 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9650723-B1 Large area seed crystal for ammonothermal crystal growth and method of making SORAA, INC. (US) 2017-05-16 US claimed
US-8618564-B2 High efficiency light emitting diodes TSMC SOLID STATE LIGHTING LTD. (TW) 2013-12-31 US claimed
US-20120080698-A1 HIGH EFFICIENCY LIGHT EMITTING DIODES TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2012-04-05 US claimed
US-20200087813-A1 Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate SORAA, INC. 2020-03-19 US disclosed
US-10400352-B2 Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate SORAA, INC. (US) 2019-09-03 US disclosed
US-20170145585-A1 LARGE AREA NITRIDE CRYSTAL AND METHOD FOR MAKING IT SORAA, INC. 2017-05-25 US disclosed
US-9650723-B1 Large area seed crystal for ammonothermal crystal growth and method of making SORAA, INC. (US) 2017-05-16 US disclosed
US-9564320-B2 Large area nitride crystal and method for making it SORAA, INC. (US) 2017-02-07 US disclosed
US-8618564-B2 High efficiency light emitting diodes TSMC SOLID STATE LIGHTING LTD. (TW) 2013-12-31 US disclosed
US-20130119401-A1 LARGE AREA NITRIDE CRYSTAL AND METHOD FOR MAKING IT SORAA, INC. (US) 2013-05-16 US disclosed
US-20120080698-A1 HIGH EFFICIENCY LIGHT EMITTING DIODES TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2012-04-05 US disclosed
US-20120000415-A1 Large Area Nitride Crystal and Method for Making It SORAA, INC. (US) 2012-01-05 US disclosed
WO-2010005914-A1 HIGH QUALITY LARGE AREA BULK NON-POLAR OR SEMIPOLAR GALLIUM BASED SUBSTRATES AND METHODS SORAA, INC. (US) 2010-01-14 WO disclosed
US-20100003492-A1 HIGH QUALITY LARGE AREA BULK NON-POLAR OR SEMIPOLAR GALLIUM BASED SUBSTRATES AND METHODS SORAA, INC. (US) 2010-01-07 US disclosed