⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL245696 | 1.00 | — | — | |
| SCHEMBL15991 | 1.00 | — | — | |
| SCHEMBL4198002 | 0.82 | — | — | |
| SCHEMBL7941410 | 0.82 | — | — | |
| SCHEMBL1401312 | 0.82 | — | — | |
| SCHEMBL18835183 | 0.82 | — | — | |
| SCHEMBL349297 | 0.82 | — | — | |
| SCHEMBL4300171 | 0.82 | — | — | |
| SCHEMBL14958359 | 0.82 | — | — | |
| SCHEMBL17458658 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20040209402-A1 | Method for making Group III nitride devices and devices produced thereby | CRYSTAL PHOTONICS, INCORPORATED (US) | 2004-10-21 | — | — | US | claimed |
| WO-2004084275-A2 | METHOD FOR MAKING GROUP III NITRIDE DEVICES AND DEVICES PRODUCED THEREBY | CRYSTAL PHOTONICS, INCORPORATED (US) | 2004-09-30 | — | — | WO | claimed |
| US-20180315844-A1 | SEMICONDUCTOR DEVICE WITH III-NITRIDE CHANNEL REGION AND SILICON CARBIDE DRIFT REGION | THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (HK) | 2018-11-01 | — | — | US | disclosed |
| CN-1877934-B | Semiconductor laser device manufacturing method | NICHIA CORP | 2011-07-27 | — | — | CN | disclosed |
| CN-102024885-A | Nitride semiconductor light-emitting component | HONGFUJIN PREC IND SHENZHEN | 2011-04-20 | — | — | CN | disclosed |
| CN-101859821-A | Gallium nitride light-emitting diode structure | SHANDONG CANYUAN OPTO ELECTRONIC TECHNOLOGY CO LTD | 2010-10-13 | — | — | CN | disclosed |
| CN-100583475-C | Nitride semiconductor light emitting element and method for fabricating the same | FUSHIMAI SEMI CONDUCTOR ACCURATE INDUSTRY SHANGHAI CO LTD | 2010-01-20 | — | — | CN | disclosed |
| CN-100524850-C | Gallium nitride light emitting diode structure | CANYUAN PHOTOELECTRIC CO LTD (CN) | 2009-08-05 | — | — | CN | disclosed |
| CN-101350389-A | Nitrifier semiconductor light emitting element and method for fabricating the same | FUSHIMAI SEMI CONDUCTOR ACCURA (CN) | 2009-01-21 | — | — | CN | disclosed |
| US-20080163814-A1 | CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B)N ON VARIOUS SUBSTRATES | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 2008-07-10 | — | — | US | disclosed |
| WO-2008073414-A1 | CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF(AI, IN, GA, B)N ON VARIOUS SUBSTRATES | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 2008-06-19 | — | — | WO | disclosed |
| CN-100375349-C | Semiconductor laser element and method for manufacturing the same | NICHIA CORP (JP) | 2008-03-12 | — | — | CN | disclosed |
| CN-101047215-A | Diamond substrate and manufacturing method thereof | CHINA GRINDSTONE ENTPR CO LTD (CN) | 2007-10-03 | — | — | CN | disclosed |
| CN-1877934-A | Semiconductor laser device manufacturing method | NICHIA CORP (JP) | 2006-12-13 | — | — | CN | disclosed |
| CN-1783606-A | Semiconductor laser element and method for manufacturing the same | NICHIA CORP (JP) | 2006-06-07 | — | — | CN | disclosed |
| CN-1251372-C | Semiconductor laser element and method for manufacturing the same | NICHIA KAGAKU KOGYO KK (JP) | 2006-04-12 | — | — | CN | disclosed |
| CN-1753197-A | Gallium nitride light emitting diode structure | CANYUAN PHOTOELECTRIC CO LTD (CN) | 2006-03-29 | — | — | CN | disclosed |
| CN-1434996-A | Semiconductor laser element and method for manufacturing the same | NICHIA CORP (JP) | 2003-08-06 | — | — | CN | disclosed |