Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL245696 | 0.82 | — | — | |
| SCHEMBL34700 | 0.82 | — | — | |
| SCHEMBL4623005 | 0.82 | — | — | |
| SCHEMBL15991 | 0.82 | — | — | |
| SCHEMBL4300171 | 0.67 | — | — | |
| SCHEMBL3103425 | 0.67 | — | — | |
| SCHEMBL2289595 | 0.67 | — | — | |
| SCHEMBL14958359 | 0.67 | — | — | |
| SCHEMBL7597370 | 0.67 | — | — | |
| SCHEMBL17458658 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 158 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116230825-B | LED epitaxial wafer with hole injection layer regulated and controlled by hydrogen impurities and preparation method thereof | 江西兆驰半导体有限公司 | 2023-07-11 | — | — | CN | claimed |
| CN-116230825-A | LED epitaxial wafer with hole injection layer regulated and controlled by hydrogen impurities and preparation method thereof | 江西兆驰半导体有限公司 | 2023-06-06 | — | — | CN | claimed |
| CN-110313069-B | Optoelectronic device with light emitting diode | 艾利迪公司 | 2023-04-28 | — | — | CN | claimed |
| US-10937777-B2 | Opto-electronic device with light-emitting diodes | Aledia (FR) | 2021-03-02 | — | — | US | claimed |
| EP-3563417-B1 | OPTOELECTRONIC DEVICE WITH LIGHT-EMITTING DIODES | Aledia (FR) | 2020-10-28 | — | — | EP | claimed |
| US-10734442-B2 | Optoelectronic device with light-emitting diodes | Aledia (FR) | 2020-08-04 | — | — | US | claimed |
| EP-2912697-B1 | METHOD FOR MANUFACTURING AN OPTOELECTRONIC DEVICE | Aledia (FR) | 2020-06-10 | — | — | EP | claimed |
| CN-107275187-B | Self-supporting gallium nitride layer and preparation method and annealing method thereof | 镓特半导体科技（上海）有限公司 | 2020-06-05 | — | — | CN | claimed |
| EP-3014665-B1 | OPTOELECTRONIC DEVICE WITH IMPROVED REFLECTIVITY AND METHOD OF MANUFACTURING THE SAME | COMMISSARIAT ENERGIE ATOMIQUE (FR) | 2020-03-04 | — | — | EP | claimed |
| EP-3563417-A1 | OPTOELECTRONIC DEVICE WITH LIGHT-EMITTING DIODES | Aledia (FR) | 2019-11-06 | — | — | EP | claimed |
| US-9129888-B2 | Nitride-based semiconductor device and manufacturing method thereof | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-09-08 | — | — | US | claimed |
| CN-103887379-A | Method for reducing GaN epitaxial defects through wet etching | XI AN SHENGUANG HAORUI PHOTOELECTRIC SCIENCE & TECHNOLOGY CO LTD | 2014-06-25 | — | — | CN | claimed |
| CN-103872190-A | Method for reducing epitaxy defect of GaN (gallium nitride) through wet etching | XI AN SHENGUANG HAORUI PHOTOELECTRIC SCIENCE & TECHNOLOGY CO LTD | 2014-06-18 | — | — | CN | claimed |
| US-20140021481-A1 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-01-23 | — | — | US | claimed |
| CN-102544270-A | Method for preparing inverted trapezoidal gallium-nitride-based light emitting diode | INST SEMICONDUCTORS CAS | 2012-07-04 | — | — | CN | claimed |
| EP-1540744-B1 | LIGHT-EMITTING DIODE WITH SILICON CARBIDE SUBSTRATE | LUMEI OPTOELECTRONICS CORP (US) | 2009-12-23 | — | — | EP | claimed |
| US-6919585-B2 | Light-emitting diode with silicon carbide substrate | LUMEI OPTOELECTRONICS, INC. (US) | 2005-07-19 | — | — | US | claimed |
| EP-1540744-A1 | LIGHT-EMITTING DIODE WITH SILICON CARBIDE SUBSTRATE | Lumei Optoelectronics Corporation (US) | 2005-06-15 | — | — | EP | claimed |
| WO-2003098713-A1 | LIGHT-EMITTING DIODE WITH SILICON CARBIDE SUBSTRATE | LUMEI OPTOELECTRONICS CORPORATION (US) | 2003-11-27 | — | — | WO | claimed |
| US-20030214807-A1 | Light-emitting diode with silicon carbide substrate | DALIAN MEIMING EPITAXY TECHNOLOGY CO., LTD. (CN) | 2003-11-20 | — | — | US | claimed |