SCHEMBL24634086

SCHEMBL24634086

C=C(C)C(=O)OCCNC(=O)CCN1C(=O)c2cccc3cccc(c23)C1=O

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RAB9A P51151 1/20 0.56
KDM4E B2RXH2 9/20 0.54
ALDH1A1 P00352 7/20 0.54
GAA P10253 1/20 0.54
HTT P42858 1/20 0.54
MEN1 O00255 6/20 0.53
KMT2A Q03164 6/20 0.53
SMN1; SMN2 Q16637 1/20 0.53
MAPT P10636 2/20 0.53
POLB P06746 3/20 0.53
HPGD P15428 1/20 0.48
RXFP1 Q9HBX9 1/20 0.47
HDAC3 O15379 1/20 0.47
LTA4H P09960 1/20 0.47
HDAC4 P56524 1/20 0.47
HDAC1 Q13547 1/20 0.47
HDAC7 Q8WUI4 1/20 0.47
HDAC2 Q92769 1/20 0.47
HDAC10 Q969S8 1/20 0.47
HDAC11 Q96DB2 1/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6346833 0.85 HEXA (0.55) RAB9AKDM4EALDH1A1GAAMEN1
SCHEMBL13609715 0.83 RXFP1 (0.61) KDM4EALDH1A1MEN1KMT2ASMN1; SMN2
SCHEMBL15217459 0.83 ALDH1A1 (0.57) KDM4EALDH1A1GAAHTTMEN1
SCHEMBL24756847 0.79 KDM4E (0.52) RAB9AKDM4EALDH1A1GAAMEN1
SCHEMBL20258427 0.79 KDM4E (0.73) RAB9AKDM4EALDH1A1GAAHTT
SCHEMBL12705829 0.77 SMN1; SMN2 (0.49) ALDH1A1GAAMEN1KMT2ASMN1; SMN2
SCHEMBL12705828 0.75 HEXA (0.48) KDM4EALDH1A1HTTMEN1KMT2A
SCHEMBL6345866 0.75 KDM4E (0.49) RAB9AKDM4EALDH1A1GAAMEN1
SCHEMBL210721 0.74 SMN1; SMN2 (0.60) RAB9AALDH1A1GAAMEN1KMT2A
SCHEMBL29631612 0.74 SMN1; SMN2 (0.60) RAB9AALDH1A1GAAMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20220252981-A1 HIGHLY SEQUENCED COPOLYMER FOR DUAL-TONE PHOTORESISTS, RESIST COMPOSITION AND PATTERNING PROCESS THEREOF Canton Litho Material Technology Inc. (CN) 2022-08-11 US disclosed