SCHEMBL246920

SCHEMBL246920

OCCC(F)(F)C(F)(F)Br

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1533040 0.82 TSHR (0.32)
SCHEMBL543762 0.80 TSHR (0.30)
SCHEMBL64586 0.79 TSHR (0.31)
SCHEMBL15856573 0.77
SCHEMBL1018060 0.75
SCHEMBL448711 0.73
SCHEMBL62589 0.73
SCHEMBL28760990 0.73
SCHEMBL26086446 0.73
SCHEMBL248018 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 138 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2080774-B1 POLYMERIZABLE SULFONIC ACID ONIUM SALT AND RESIN JSR CORP (JP) 2014-01-15 EP claimed
US-7956142-B2 Polymerizable sulfonic acid onium salt and resin JSR CORPORATION (JP) 2011-06-07 US claimed
US-20100063232-A1 POLYMERIZABLE SULFONIC ACID ONIUM SALT AND RESIN JSR CORPORATION (JP) 2010-03-11 US claimed
EP-2080774-A1 POLYMERIZABLE SULFONIC ACID ONIUM SALT AND RESIN JSR Corporation (JP) 2009-07-22 EP claimed
US-20250362596-A1 RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING PATTERN, AND RADIATION-SENSITIVE ACID GENERATOR JSR CORPORATION (JP) 2025-11-27 US disclosed
US-20250334881-A1 RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, RADIATION SENSITIVE ACID GENERATOR, AND ACID DIFFUSION CONTROL AGENT JSR CORPORATION (JP) 2025-10-30 US disclosed
US-20250271756-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND RADIATION-SENSITIVE ACID-GENERATING AGENT JSR CORPORATION (JP) 2025-08-28 US disclosed
US-20250271762-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN JSR CORPORATION (JP) 2025-08-28 US disclosed
US-20250271761-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN JSR CORPORATION (JP) 2025-08-28 US disclosed
WO-2025070119-A1 RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND ONIUM SALT COMPOUND JSR株式会社 2025-04-03 WO disclosed
US-20250076760-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN JSR CORPORATION (JP) 2025-03-06 US disclosed
WO-2024181434-A1 RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID GENERATION AGENT JSR株式会社 2024-09-06 WO disclosed
US-20100040977-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-02-18 US disclosed
EP-2088467-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2009-08-12 EP disclosed
EP-2088467-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2009-08-12 EP disclosed
US-7569324-B2 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-04 US disclosed
EP-2080774-A1 POLYMERIZABLE SULFONIC ACID ONIUM SALT AND RESIN JSR Corporation (JP) 2009-07-22 EP disclosed
EP-2080774-A1 POLYMERIZABLE SULFONIC ACID ONIUM SALT AND RESIN JSR Corporation (JP) 2009-07-22 EP disclosed
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-29 US disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed