⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6062196 | 0.97 | — | — | |
| Hydrochloric Acid SCHEMBL2998943 | 0.95 | — | — | |
| SCHEMBL19630163 | 0.78 | — | — | |
| SCHEMBL22023615 | 0.78 | — | — | |
| SCHEMBL19630444 | 0.78 | — | — | |
| SCHEMBL22022489 | 0.77 | — | — | |
| SCHEMBL30168245 | 0.75 | — | — | |
| SCHEMBL28540349 | 0.74 | — | — | |
| SCHEMBL28950862 | 0.74 | — | — | |
| SCHEMBL21894493 | 0.73 | FDPS (0.31) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2024135498-A1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND | 東京応化工業株式会社 | 2024-06-27 | — | — | WO | disclosed |
| WO-2024127977-A1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT | 東京応化工業株式会社 | 2024-06-20 | — | — | WO | disclosed |
| WO-2024122425-A1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT | 東京応化工業株式会社 | 2024-06-13 | — | — | WO | disclosed |
| WO-2024043098-A1 | RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND INTERMEDIATE THEREOF | 東京応化工業株式会社 | 2024-02-29 | — | — | WO | disclosed |
| WO-2024043121-A1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND AND INTERMEDIATE THEREFOR | 東京応化工業株式会社 | 2024-02-29 | — | — | WO | disclosed |
| WO-2023223897-A1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND | 東京応化工業株式会社 | 2023-11-23 | — | — | WO | disclosed |
| WO-2023223865-A1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT | 東京応化工業株式会社 | 2023-11-23 | — | — | WO | disclosed |
| WO-2023189961-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | 東京応化工業株式会社 | 2023-10-05 | — | — | WO | disclosed |
| WO-2023176546-A1 | RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND ACID GENERATOR | 東京応化工業株式会社 | 2023-09-21 | — | — | WO | disclosed |
| WO-2023171527-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | 東京応化工業株式会社 | 2023-09-14 | — | — | WO | disclosed |
| WO-2023171743-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, COMPOUND, AND POLYMER | 東京応化工業株式会社 | 2023-09-14 | — | — | WO | disclosed |
| WO-2023162907-A1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID GENERATION AGENT | 東京応化工業株式会社 | 2023-08-31 | — | — | WO | disclosed |
| WO-2023163008-A1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND POLYMER COMPOUND | 東京応化工業株式会社 | 2023-08-31 | — | — | WO | disclosed |
| WO-2023112893-A1 | RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD | 東京応化工業株式会社 | 2023-06-22 | — | — | WO | disclosed |
| WO-2023068251-A1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT | 東京応化工業株式会社 | 2023-04-27 | — | — | WO | disclosed |
| WO-2022270627-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | 東京応化工業株式会社 | 2022-12-29 | — | — | WO | disclosed |
| WO-2022265002-A1 | RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD | 東京応化工業株式会社 | 2022-12-22 | — | — | WO | disclosed |
| WO-2022264845-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | 東京応化工業株式会社 | 2022-12-22 | — | — | WO | disclosed |
| WO-2022265034-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR PRODUCING COMPOUNDS, INTERMEDIATE, AND COMPOUNDS | 東京応化工業株式会社 | 2022-12-22 | — | — | WO | disclosed |