Butane

Butane

SCHEMBL2503526

CC(C)(C)O[SiH2]OC(C)(C)C.CCCC

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL474807 0.86 ALDH1A1 (0.36)
SCHEMBL28003156 0.77
SCHEMBL27635425 0.75
Butane SCHEMBL3799640 0.74 TSHR (0.33)
SCHEMBL5049758 0.72 TSHR (0.31)
Butadiene SCHEMBL1066374 0.71
SCHEMBL27749638 0.69
Butane SCHEMBL4463544 0.69 ALDH1A1 (0.38)
SCHEMBL707582 0.69
Butane SCHEMBL297926 0.67 TSHR (0.67)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10408984-B2 Optical phase difference component, composite optical component, incorporating optical phase difference component, and method for manufacturing optical phase difference component JX NIPPON OIL AND ENERGY CORPORATION (JP) 2019-09-10 US disclosed
US-20170199313-A1 OPTICAL PHASE DIFFERENCE COMPONENT, COMPOSITE OPTICAL COMPONENT, INCORPORATING OPTICAL PHASE DIFFERENCE COMPONENT, AND METHOD FOR MANUFACTURING OPTICAL PHASE DIFFERENCE COMPONENT JX NIPPON OIL & ENERGY CORPORATION (JP) 2017-07-13 US disclosed
EP-3145276-A1 FILM MEMBER HAVING UNEVEN STRUCTURE JX Nippon Oil & Energy Corporation (JP) 2017-03-22 EP disclosed
US-20170054112-A1 FILM MEMBER HAVING UNEVEN STRUCTURE JX NIPPON OIL & ENERGY CORPORATION (JP) 2017-02-23 US disclosed
EP-3125312-A1 EPITAXIAL GROWTH SUBSTRATE AND LIGHT-EMITTING ELEMENT USING SAME JX Nippon Oil & Energy Corporation (JP) 2017-02-01 EP disclosed
US-20170012169-A1 EPITAXIAL GROWTH SUBSTRATE AND LIGHT-EMITTING ELEMENT USING SAME JX NIPPON OIL & ENERGY CORPORATION (JP) 2017-01-12 US disclosed
US-8253251-B2 Method for producing low-k film, semiconductor device, and method for manufacturing the same ELPIDA MEMORY, INC. (JP) 2012-08-28 US disclosed
US-8030221-B2 Method for producing low-k l film, semiconductor device, and method for manufacturing the same ELPIDA MEMORY, INC. (JP) 2011-10-04 US disclosed
US-20100289143-A1 METHOD FOR PRODUCING LOW-k FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME ELPIDA MEMORY, INC (JP) 2010-11-18 US disclosed
US-20090251652-A1 Silica based positive type photosensitive organic compound HITACHI CHEMICAL CO., LTD. 2009-10-08 US disclosed
EP-1428828-A1 PROCESS FOR PREPARATION OF ALKOXYSILANES TOAGOSEI CO., LTD. (JP) 2004-06-16 EP disclosed
US-6749944-B2 VAPOR DEPOSITION, OSCILLATION, HEATING USING ORGANOSILICON COMPOUND; FORMING DIELECTRIC JSR CORPORATION (JP) 2004-06-15 US disclosed
US-20040013972-A1 Radiation-sensitive composition changing in refractive index and method of changing refractive index JSR CORPORATION (JP) 2004-01-22 US disclosed
EP-1350814-A1 RADIATION-SENSITIVE COMPOSITION CHANGING IN REFRACTIVE INDEX AND METHOD OF CHANGING REFRACTIVE INDEX JSR Corporation (JP) 2003-10-08 EP disclosed
US-20030077461-A1 Stacked film, insulating film and substrate for semiconductor JSR CORPORATION (JP) 2003-04-24 US disclosed
US-20030064303-A1 Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern JSR CORPORATION (JP) 2003-04-03 US disclosed
EP-1298176-A2 Stacked film insulating film and substrate for semiconductor JSR Corporation (JP) 2003-04-02 EP disclosed
US-20030059628-A1 Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor JSR CORPORATION (JP) 2003-03-27 US disclosed
EP-1295924-A2 Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor JSR Corporation (JP) 2003-03-26 EP disclosed
EP-1235104-A1 COMPOSITION HAVING REFRACTIVE INDEX SENSITIVELY CHANGEABLE BY RADIATION AND METHOD FOR FORMING REFRACTIVE INDEX PATTERN JSR Corporation (JP) 2002-08-28 EP disclosed