Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.43 |
| ▸ | GRIN2D | O15399 | 3/20 | 0.35 |
| ▸ | GRIN3B | O60391 | 3/20 | 0.35 |
| ▸ | GRIN1 | Q05586 | 3/20 | 0.35 |
| ▸ | GRIN2A | Q12879 | 3/20 | 0.35 |
| ▸ | GRIN2B | Q13224 | 3/20 | 0.35 |
| ▸ | GRIN2C | Q14957 | 3/20 | 0.35 |
| ▸ | GRIN3A | Q8TCU5 | 3/20 | 0.35 |
| ▸ | SLC22A2 | O15244 | 2/20 | 0.33 |
| ▸ | SLC47A1 | Q96FL8 | 2/20 | 0.33 |
| ▸ | LMNA | P02545 | 2/20 | 0.33 |
| ▸ | SLC22A1 | O15245 | 1/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.33 |
| ▸ | STAT6 | P42226 | 1/20 | 0.33 |
| ▸ | SIGMAR1 | Q99720 | 1/20 | 0.33 |
| ▸ | POLB | P06746 | 1/20 | 0.32 |
| ▸ | THRB | P10828 | 1/20 | 0.32 |
| ▸ | BLM | P54132 | 1/20 | 0.32 |
| ▸ | PMP22 | Q01453 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5672670 | 0.78 | NPSR1 (0.41) | NPSR1GRIN2DGRIN3BGRIN1GRIN2A | |
| SCHEMBL5917752 | 0.77 | PKM (0.42) | NPSR1TSHR | |
| SCHEMBL482477 | 0.75 | NPSR1 (0.40) | NPSR1GRIN2DGRIN3BGRIN1GRIN2A | |
| SCHEMBL8864 | 0.74 | NPSR1 (0.43) | NPSR1GRIN2DGRIN3BGRIN1GRIN2A | |
| SCHEMBL414172 | 0.74 | NPSR1 (0.38) | NPSR1GRIN2DGRIN3BGRIN1GRIN2A | |
| SCHEMBL29104085 | 0.72 | NPSR1 (0.41) | NPSR1GRIN2DGRIN3BGRIN1GRIN2A | |
| SCHEMBL28347198 | 0.72 | NPSR1 (0.41) | NPSR1GRIN2DGRIN3BGRIN1GRIN2A | |
| SCHEMBL28760555 | 0.72 | NPSR1 (0.41) | NPSR1GRIN2DGRIN3BGRIN1GRIN2A | |
| SCHEMBL28478184 | 0.72 | NPSR1 (0.41) | NPSR1GRIN2DGRIN3BGRIN1GRIN2A | |
| SCHEMBL727714 | 0.69 | NPSR1 (0.48) | NPSR1GRIN2DGRIN3BGRIN1GRIN2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 202 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-112180680-A | Radical-cation hybrid photocurable composition and photosensitive dry film resist | 四川乐凯新材料有限公司 | 2021-01-05 | — | — | CN | claimed |
| CN-112147843-A | Cationic photocurable composition and photosensitive dry film resist | 四川乐凯新材料有限公司 | 2020-12-29 | — | — | CN | claimed |
| US-7588876-B2 | Resist material and pattern formation method | PANASONIC CORPORATION (JP) | 2009-09-15 | — | — | US | claimed |
| US-7413843-B2 | Sulfonamide compound, polymer compound, resist material and pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2008-08-19 | — | — | US | claimed |
| US-7378216-B2 | Resist material and pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2008-05-27 | — | — | US | claimed |
| US-20070099117-A1 | Sulfonamide compound, polymer compound, resist material and pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2007-05-03 | — | — | US | claimed |
| US-7169530-B2 | Polymer compound, resist material and pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2007-01-30 | — | — | US | claimed |
| EP-1602976-B1 | Resist material and pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) | 2007-01-17 | — | — | EP | claimed |
| US-20050277057-A1 | Resist material and pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-12-15 | — | — | US | claimed |
| EP-1602976-A1 | Resist material and pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-12-07 | — | — | EP | claimed |
| US-20050266338-A1 | Resist material and pattern formation method | PANASONIC CORPORATION (JP) | 2005-12-01 | — | — | US | claimed |
| US-20050266337-A1 | Resist material and pattern formation method | PANNOVA SEMIC, LLC | 2005-12-01 | — | — | US | claimed |
| US-20050186501-A1 | Addition polymer containing an unsaturated aromatic sulfonamide compound, unsaturated aromatic ether and acrylated resin; exposure to light; forming pattern | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2005-08-25 | — | — | US | claimed |
| EP-1517181-A1 | Sulfonamide compound, polymer compound, reist material and pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-03-23 | — | — | EP | claimed |
| US-20050058935-A1 | Sulfonamide compound, polymer compound, resist material and pattern formation method | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2005-03-17 | — | — | US | claimed |
| US-20240077980-A1 | TRANSPARENT CONDUCTIVE SUBSTRATE AND A DOUBLE-SIDE PHOTOLITHOGRAPHIC METHOD USING THE SAME | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2024-03-07 | — | — | US | disclosed |
| CN-117641746-A | Transparent conductive substrate and double-sided photolithography method using same | 杜邦电子公司 | 2024-03-01 | — | — | CN | disclosed |
| US-5994025-A | MIXTURE OF POLYMER AND ACID GENERATOR | NEC CORPORATION (JP) | 1999-11-30 | — | — | US | disclosed |
| US-5985522-A | PATTERN PHOTORESISTS, EXPOSURE TO LIGHT, DEVELOPMENT OF METHACRYLATE POLYMERS | NEC CORPORATION (JP) | 1999-11-16 | — | — | US | disclosed |
| US-5770346-A | BRIDGED CYCLIC HYDROCARBON GROUP-CONTAINING ACRYLATE POLYMER | NEC CORPORATION (JP) | 1998-06-23 | — | — | US | disclosed |