SCHEMBL2507693

SCHEMBL2507693

CCCCCCCC[SiH](CCCCCCCC)N(C)[Si](C)(C)C

nearest known ligand 0.37

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 3/20 0.37
TSHR P16473 1/20 0.36
THRB P10828 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25301121 1.00 DNM1 (0.37) DNM1TSHRTHRB
SCHEMBL1204222 1.00 DNM1 (0.37) DNM1TSHRTHRB
SCHEMBL27834370 1.00 DNM1 (0.37) DNM1TSHRTHRB
SCHEMBL328756 0.91
SCHEMBL2503495 0.80
SCHEMBL28922190 0.75 TSHR (0.44) DNM1TSHRTHRB
Octane SCHEMBL27556408 0.74 DNM1 (0.42) DNM1TSHRTHRB
Hexane SCHEMBL4630266 0.73 DNM1 (0.36) DNM1TSHRTHRB
SCHEMBL17024459 0.66 TSHR (0.53) DNM1TSHRTHRB
SCHEMBL22283393 0.66 TSHR (0.53) DNM1TSHRTHRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 48 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9293417-B2 Method for forming barrier film on wiring line TOKYO ELECTRON LIMITED (JP) 2016-03-22 US claimed
CN-104245132-A High activity catalyst for hydrosilylation reactions and methods of making the same MOMENTIVE PERFORMANCE MAT INC 2014-12-24 CN claimed
US-8709541-B2 Method for forming a film TOKYO ELECTRON LIMITED (JP) 2014-04-29 US claimed
US-20120251721-A1 DEVICE AND METHOD FOR FORMING FILM TOKYO ELECTRON LIMITED (JP) 2012-10-04 US claimed
US-20120114869-A1 FILM FORMING METHOD TOKYO ELECTRON LIMITED (JP) 2012-05-10 US claimed
US-7129187-B2 Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films TOKYO ELECTRON LIMITED (JP) 2006-10-31 US claimed
WO-2006019438-A2 LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON-NITROGEN-CONTAINING FILMS TOKYO ELECTRON LIMITED (JP) 2006-02-23 WO claimed
US-20060014399-A1 Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films TOKYO ELECTRON LIMITED 2006-01-19 US claimed
US-10378105-B2 Selective deposition with surface treatment TOKYO ELECTRON LIMITED (JP) 2019-08-13 US disclosed
CN-109235048-A A kind of preparation method of fire-retardant air duct cloth material 孝感寰誉新材科技有限公司 2019-01-18 CN disclosed
CN-107427838-A For separating the composition and method of fluid 莫门蒂夫性能材料股份有限公司 2017-12-01 CN disclosed
US-20170342553-A1 SELECTIVE DEPOSITION WITH SURFACE TREATMENT TOKYO ELECTRON LIMITED (JP) 2017-11-30 US disclosed
CN-104245132-B High activated catalyst and its preparation method for hydrosilylation reactions 莫门蒂夫性能材料股份有限公司 2017-09-22 CN disclosed
US-9293417-B2 Method for forming barrier film on wiring line TOKYO ELECTRON LIMITED (JP) 2016-03-22 US disclosed
WO-2002023625-A2 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR TOKYO ELECTRON LIMITED (JP) 2002-03-21 WO disclosed
EP-0535947-B1 Inorganic acid catalyzed silylation reactions DOW CORNING (US) 2000-05-03 EP disclosed
US-5824442-A CONTROLLING DEVELOPMENT AND DEVELOPMENT FOR ELECTROSTATIC IMAGES WITH THIN FILMS CANON KABUSHIKI KAISHA (JP) 1998-10-20 US disclosed
US-5707770-A TITANIA OR ALUMINA PARTICLES SURFACE TREATED WITH A SILICON COMPOUND OR SILICONE OIL, IMPROVED PERFORMANCE IN HIGH HUMIDITY CANON KABUSHIKI KAISHA (JP) 1998-01-13 US disclosed
US-5157139-A Inorganic acid catalysed silylation reactions DOW CORNING CORPORATION (US) 1992-10-20 US disclosed
US-4333564-A Method of controlling rheological properties of gel-like compositions SHERWOOD MEDICAL INDUSTRIES INC. (US) 1982-06-08 US disclosed