SCHEMBL328756

SCHEMBL328756

CCCC[SiH](CCCC)N(C)[Si](C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2507693 0.91 DNM1 (0.37)
SCHEMBL25301121 0.91 DNM1 (0.37)
SCHEMBL1204222 0.91 DNM1 (0.37)
SCHEMBL27834370 0.91 DNM1 (0.37)
SCHEMBL2503495 0.84
SCHEMBL7050339 0.78
SCHEMBL131707 0.73
SCHEMBL2268334 0.73 TSHR (0.35)
Hexane SCHEMBL4630266 0.72 DNM1 (0.36)
SCHEMBL11586393 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 80 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-104245132-B High activated catalyst and its preparation method for hydrosilylation reactions 莫门蒂夫性能材料股份有限公司 2017-09-22 CN claimed
US-9293417-B2 Method for forming barrier film on wiring line TOKYO ELECTRON LIMITED (JP) 2016-03-22 US claimed
CN-104245132-A High activity catalyst for hydrosilylation reactions and methods of making the same MOMENTIVE PERFORMANCE MAT INC 2014-12-24 CN claimed
US-8709541-B2 Method for forming a film TOKYO ELECTRON LIMITED (JP) 2014-04-29 US claimed
US-20120251721-A1 DEVICE AND METHOD FOR FORMING FILM TOKYO ELECTRON LIMITED (JP) 2012-10-04 US claimed
CN-102473616-A Film forming method TOKYO ELECTRON LTD 2012-05-23 CN claimed
US-20120114869-A1 FILM FORMING METHOD TOKYO ELECTRON LIMITED (JP) 2012-05-10 US claimed
US-7618913-B2 Coordination catalyst containing an organosilicon compound , nitrogen compound, transition metal compound and magnesiumon compound on catalyst support FORMOSA PLASTICS CORPORATION, U.S.A. (US) 2009-11-17 US claimed
WO-2008027479-A2 HIGHLY ACTIVE ALPHA-OLEFIN COPOLYMERIZATION CATALYST SYSTEM FORMOSA PLASTICS CORPORATION, U.S.A. (US) 2008-03-06 WO claimed
US-20080058198-A1 Highly active alpha-olefin copolymerization catalyst system FORMOSA PLASTICS CORPORATION, U.S.A. 2008-03-06 US claimed
US-7129187-B2 Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films TOKYO ELECTRON LIMITED (JP) 2006-10-31 US claimed
WO-2006019438-A2 LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON-NITROGEN-CONTAINING FILMS TOKYO ELECTRON LIMITED (JP) 2006-02-23 WO claimed
US-20060014399-A1 Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films TOKYO ELECTRON LIMITED 2006-01-19 US claimed
US-20040035791-A1 Formation of hydrophilic sites in partially silylated micelle templated silica UNIVERSITE LAVAL (CA) 2004-02-26 US claimed
WO-2002016267-A1 FORMATION OF HYDROPHILIC SITES IN PARTIALLY SILYLATED MICELLE TEMPLATED SILICA UNIVERSITE LAVAL (CA) 2002-02-28 WO claimed
US-20250066621-A1 COMPOSITION FOR FILM FORMATION AND METHOD FOR MANUFACTURING SUBSTRATE CENTRAL GLASS COMPANY, LIMITED (JP) 2025-02-27 US disclosed
WO-2024248021-A1 FILM-FORMING COMPOSITION, METHOD FOR PRODUCING SUBSTRATE, AND METHOD FOR PRODUCING FILM-FORMING COMPOSITION セントラル硝子株式会社 2024-12-05 WO disclosed
WO-2002023625-A2 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR TOKYO ELECTRON LIMITED (JP) 2002-03-21 WO disclosed
WO-2002016267-A1 FORMATION OF HYDROPHILIC SITES IN PARTIALLY SILYLATED MICELLE TEMPLATED SILICA UNIVERSITE LAVAL (CA) 2002-02-28 WO disclosed
US-5738976-A HEAT RESISTANT, STORAGE STABLE POLYSILSESQUIOXANE MIXED WITH PHOTOSENSITIZER; PHOTORESISTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-04-14 US disclosed