⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL250752 | 0.80 | — | — | |
| SCHEMBL333168 | 0.71 | — | — | |
| SCHEMBL1772792 | 0.68 | — | — | |
| SCHEMBL3834726 | 0.68 | — | — | |
| SCHEMBL9474788 | 0.62 | — | — | |
| SCHEMBL31198526 | 0.62 | — | — | |
| SCHEMBL13070023 | 0.62 | — | — | |
| SCHEMBL10346634 | 0.58 | — | — | |
| SCHEMBL251016 | 0.57 | — | — | |
| SCHEMBL30899713 | 0.57 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-106233436-B | Method for increasing etching rate of silicon etching process by etching chamber pretreatment | 国际商业机器公司 | 2020-01-07 | — | — | CN | disclosed |
| US-9711365-B2 | Etch rate enhancement for a silicon etch process through etch chamber pretreatment | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2017-07-18 | — | — | US | disclosed |
| US-20150318182-A1 | ETCH RATE ENHANCEMENT FOR A SILICON ETCH PROCESS THROUH ETCH CHAMBER PRETREATMENT | ZEON CORPORATION (JP) | 2015-11-05 | — | — | US | disclosed |
| US-8928124-B2 | High aspect ratio and reduced undercut trench etch process for a semiconductor substrate | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2015-01-06 | — | — | US | disclosed |
| US-8652969-B2 | High aspect ratio and reduced undercut trench etch process for a semiconductor substrate | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-02-18 | — | — | US | disclosed |
| US-20130328173-A1 | HIGH ASPECT RATIO AND REDUCED UNDERCUT TRENCH ETCH PROCESS FOR A SEMICONDUCTOR SUBSTRATE | ZEON CORPORATION (JP) | 2013-12-12 | — | — | US | disclosed |
| US-20130105947-A1 | HIGH ASPECT RATIO AND REDUCED UNDERCUT TRENCH ETCH PROCESS FOR A SEMICONDUCTOR SUBSTRATE | ZEON CORPORATION (JP) | 2013-05-02 | — | — | US | disclosed |
| US-8399723-B2 | Processes for production and purification of hydrofluoroolefins | E I DU PONT DE NEMOURS AND COMPANY (US) | 2013-03-19 | — | — | US | disclosed |
| US-20120004475-A1 | PROCESSES FOR PRODUCTION AND PURIFICATION OF HYDROFLUOROOLEFINS | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 2012-01-05 | — | — | US | disclosed |
| US-20110118512-A1 | PROCESSES FOR PRODUCTION AND PURIFICATION OF HYDROFLUOROOLEFINS | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 2011-05-19 | — | — | US | disclosed |
| US-7897823-B2 | Process for production of azeotrope compositions comprising hydrofluoroolefin and hydrogen fluoride and uses of said azeotrope compositions in separation processes | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 2011-03-01 | — | — | US | disclosed |
| EP-1960336-A1 | PROCESSES FOR PRODUCTION AND PURIFICATION OF HYDROFLUOROOLEFINS | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 2008-08-27 | — | — | EP | disclosed |
| WO-2007053178-A1 | PROCESSES FOR PRODUCTION AND PURIFICATION OF HYDROFLUOROOLEFINS | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 2007-05-10 | — | — | WO | disclosed |
| US-20060106263-A1 | Processes for production and purification of hydrofluoroolefins | THE CHEMOURS COMPANY FC, LLC | 2006-05-18 | — | — | US | disclosed |
| EP-1523742-A1 | COATING SOLUTIONS | Honeywell International, Inc. (US) | 2005-04-20 | — | — | EP | disclosed |
| US-20040063843-A1 | Coating solutions | HONEYWELL INTERNATIONAL, INC. (US) | 2004-04-01 | — | — | US | disclosed |
| WO-2004010427-A1 | COATING SOLUTIONS | HONEYWELL INTERNATIONAL INC. (US) | 2004-01-29 | — | — | WO | disclosed |
| EP-0964438-A1 | DRY ETCHING METHOD | Japan as represented by Director-General, Agency of Industrial Science and Technology (JP) | 1999-12-15 | — | — | EP | disclosed |
| EP-0948033-A1 | GAS COMPOSITION FOR DRY ETCHING AND PROCESS OF DRY ETCHING | Japan as represented by Director-General, Agency of Industrial Science and Technology (JP) | 1999-10-06 | — | — | EP | disclosed |