SCHEMBL2514740

SCHEMBL2514740

O=C=CC1C=Cc2ccccc21

nearest known ligand 0.35

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
HTR2A P28223 1/20 0.35
HTR6 P50406 1/20 0.35
BRD4 O60885 1/20 0.33
CCL2 P13500 1/20 0.33
ATM Q13315 1/20 0.31
CYP2D6 P10635 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL194747 0.79 HTR2A (0.38) HTR2AHTR6BRD4CCL2CYP2D6
SCHEMBL3259048 0.77 HTR6 (0.31) HTR2AHTR6
SCHEMBL29393845 0.75 HTR2A (0.38) HTR2AHTR6BRD4CCL2CYP2D6
SCHEMBL2951329 0.75 HTR2A (0.38) HTR2AHTR6BRD4CCL2CYP2D6
SCHEMBL2364504 0.75 HTR2A (0.38) HTR2AHTR6BRD4CCL2CYP2D6
SCHEMBL9370624 0.75 HTR2A (0.38) HTR2AHTR6BRD4CCL2CYP2D6
Hydrochloric Acid SCHEMBL8522504 0.73 HTR2A (0.36) HTR2AHTR6BRD4CCL2CYP2D6
Hydrochloric Acid SCHEMBL8522502 0.73 HTR2A (0.36) HTR2AHTR6BRD4CCL2CYP2D6
Fluoride SCHEMBL29462970 0.73 HTR2A (0.36) HTR2AHTR6BRD4CCL2CYP2D6
Fluoride SCHEMBL178212 0.73 HTR2A (0.36) HTR2AHTR6BRD4CCL2CYP2D6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
JP-4172461-A None JP disclosed
JP-7287879-A None JP disclosed
JP-3257817-A None JP disclosed
US-20190204737-A1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION AND CURED FILM PREPARED THEREFROM ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD (KR) 2019-07-04 US disclosed
CN-104909581-B It is used to form the pre-treating method of the glass substrate of etching mask 东京应化工业株式会社 2019-03-08 CN disclosed
CN-106444289-A UV irradiation apparatus, resist pattern forming apparatus, UV irradiation method, and resist pattern forming method 东京应化工业株式会社 2017-02-22 CN disclosed
CN-104909581-A Pretreatment method of glass substrate used for forming etching mask TOKYO OHKA KOGYO COMPANY 2015-09-16 CN disclosed
CN-104185773-A Inertial force sensor PANASONIC CORP 2014-12-03 CN disclosed
US-20140083458-A1 PHOTORESIST STRIPPING SOLUTION, STRIPPING SOLUTION RECYCLING SYSTEM AND OPERATING METHOD, AND METHOD FOR RECYCLING STRIPPING SOLUTION PANASONIC CORPORATION (JP) 2014-03-27 US disclosed
CN-103547708-A Method of machining metal plate for manufacturing scaled model, method of manufacturing scaled model, and scaled model KIM IL WEON 2014-01-29 CN disclosed
US-20130160548-A1 INERTIAL FORCE SENSOR PANASONIC CORPORATION (JP) 2013-06-27 US disclosed
WO-2012161430-A2 METHOD OF MACHINING METAL PLATE FOR MANUFACTURING SCALED MODEL, METHOD OF MANUFACTURING SCALED MODEL, AND SCALED MODEL KIM IL-WEON (KR) 2012-11-29 WO disclosed
US-8034529-B2 Photosensitive resin composition and photosensitive element HITACHI CHEMICAL COMPANY, LTD. (JP) 2011-10-11 US disclosed
US-20090214979-A1 PHOTOSENSITIVE RESIN COMPOSITION AND PHOTOSENSITIVE ELEMENT HITACHI CHEMICAL COMPANY, LTD. (JP) 2009-08-27 US disclosed
JP-2000100788-A RESIST SOLUTION AND FORMATION OF PATTERN NIPPON TELEGR & TELEPH CORP <NTT> 2000-04-07 JP disclosed
US-5648199-A SEMICONDUCTORS MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 1997-07-15 US disclosed
JP-H07287879-A PRODUCTION OF STAMPER FOR OPTICAL RECORDING MEDIUM SEIKO EPSON CORP 1995-10-31 JP disclosed
JP-H04172461-A FORMATION OF RESIST PATTERN KAWASAKI STEEL CORP 1992-06-19 JP disclosed
JP-H03257817-A FORMATION OF RESIST PATTERN DAINIPPON PRINTING CO LTD 1991-11-18 JP disclosed
US-4610953-A PATTERNS TOKYO OHKA KOGYO CO., LTD. (JP) 1986-09-09 US disclosed