Predicted protein targets (top 13)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.37 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.37 |
| ▸ | MEN1 | O00255 | 2/20 | 0.34 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.34 |
| ▸ | GAA | P10253 | 1/20 | 0.34 |
| ▸ | LMNA | P02545 | 2/20 | 0.31 |
| ▸ | MAPT | P10636 | 1/20 | 0.31 |
| ▸ | HTT | P42858 | 1/20 | 0.31 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.31 |
| ▸ | ALPL | P05186 | 1/20 | 0.31 |
| ▸ | ALPI | P09923 | 1/20 | 0.31 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.30 |
| ▸ | CYP2A6 | P11509 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL371330 | 0.83 | ALDH1A1 (0.43) | ALDH1A1KDM4EMEN1KMT2AGAA | |
| SCHEMBL28245107 | 0.82 | ALDH1A1 (0.42) | ALDH1A1KDM4EMEN1KMT2AGAA | |
| SCHEMBL287154 | 0.82 | ALDH1A1 (0.42) | ALDH1A1KDM4EMEN1KMT2AGAA | |
| SCHEMBL29089533 | 0.79 | NPSR1 (0.39) | ALDH1A1MEN1KMT2AGAALMNA | |
| SCHEMBL7107507 | 0.79 | ALDH1A1 (0.40) | ALDH1A1KDM4EMEN1KMT2ALMNA | |
| SCHEMBL10607966 | 0.79 | ALDH1A1 (0.39) | ALDH1A1KDM4EMEN1KMT2AGAA | |
| SCHEMBL10975256 | 0.79 | CASP3 (0.33) | ALDH1A1KDM4EMEN1KMT2ALMNA | |
| SCHEMBL28245079 | 0.78 | HPRT1 (0.40) | ALDH1A1KDM4EMEN1KMT2AGAA | |
| SCHEMBL10524300 | 0.77 | ELANE (0.40) | ALDH1A1KDM4EMEN1KMT2ALMNA | |
| SCHEMBL11353993 | 0.77 | ALDH1A1 (0.41) | ALDH1A1KDM4EGAALMNAMAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11906900-B2 | Chemically amplified positive photoresist composition for improving pattern profile | YOUNG CHANG CHEMICAL CO., LTD (KR) | 2024-02-20 | — | — | US | claimed |
| US-20210216013-A1 | CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR IMPROVING PATTERN PROFILE | YOUNG CHANG CHEMICAL CO., LTD (KR) | 2021-07-15 | — | — | US | claimed |
| US-20190146338-A1 | POSITIVE PHOTORESIST COMPOSITION, PHOTORESIST PATTERN USING THE SAME, AND MANUFACTURING METHOD OF THE PHOTORESIST PATTERN | LG CHEM, LTD. (KR) | 2019-05-16 | — | — | US | claimed |
| US-6893793-B2 | Photosensitive polymer and chemically amplified photoresist composition containing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-05-17 | — | — | US | claimed |
| US-20030170563-A1 | Photosensitive polymer and chemically amplified photoresist composition containing the same | JUNG DONG-WON (KR) | 2003-09-11 | — | — | US | claimed |
| US-20020193542-A1 | Photosensitive polymer and chemically amplified photoresist composition containing the same | JUNG DONG-WON (KR) | 2002-12-19 | — | — | US | claimed |
| US-6472120-B1 | IMPROVED ETCHING RESISTANCE ADHESION, WETTABILITY; FIRST MONOMER IS NORBORNENE ESTER, AND A SECOND MONOMER IS MALEIC ANHYDRIDE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-10-29 | — | — | US | claimed |
| US-6143466-A | Chemically amplified photoresist composition | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2000-11-07 | — | — | US | claimed |
| US-11906900-B2 | Chemically amplified positive photoresist composition for improving pattern profile | YOUNG CHANG CHEMICAL CO., LTD (KR) | 2024-02-20 | — | — | US | disclosed |
| US-11624982-B2 | Photosensitive resin composition and cured film | LG CHEM, LTD. (KR) | 2023-04-11 | — | — | US | disclosed |
| US-20210216013-A1 | CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR IMPROVING PATTERN PROFILE | YOUNG CHANG CHEMICAL CO., LTD (KR) | 2021-07-15 | — | — | US | disclosed |
| US-11003077-B2 | Positive photoresist composition, photoresist pattern using the same, and manufacturing method of the photoresist pattern | LG CHEM, LTD. (KR) | 2021-05-11 | — | — | US | disclosed |
| US-20200166842-A1 | PHOTOSENSITIVE RESIN COMPOSITION AND CURED FILM | LG CHEM, LTD. (KR) | 2020-05-28 | — | — | US | disclosed |
| US-20190146338-A1 | POSITIVE PHOTORESIST COMPOSITION, PHOTORESIST PATTERN USING THE SAME, AND MANUFACTURING METHOD OF THE PHOTORESIST PATTERN | LG CHEM, LTD. (KR) | 2019-05-16 | — | — | US | disclosed |
| US-6497987-B1 | MIXTURES OF POLYETHERS, ACID GENERATORS AND AMINES THAT MAINTAIN TRANSPARENCY WHEN EXPOSED TO SHORT-WAVELENGTH LIGHT AND HAVE IMPROVED ADHESION TO FILMS, SOLUBILITY TO DEVELOPERS AND ETCH SELECTIVITY; PHOTOLITHOGRAPHY | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-12-24 | — | — | US | disclosed |
| US-20020193542-A1 | Photosensitive polymer and chemically amplified photoresist composition containing the same | JUNG DONG-WON (KR) | 2002-12-19 | — | — | US | disclosed |
| US-6284438-B1 | PROVIDING SEMICONDUCTOR SUBSTRATE; FORMING MATERIAL FILM TO BE PATTERNED ON SEMICONDUCTOR SUBSTRATE; FORMING A PHOTORESIST FILM ON THE MATERIAL FILM BY COATING PHOTORESIST; PATTERNING PHOTORESIST FILM REDUCING SIZE OF OPENING BY THERMAL FLOW | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2001-09-04 | — | — | US | disclosed |
| EP-1078945-A2 | Polymer for use in a photoresist composition | SAMSUNG ELECTRONICS CO. LTD. (KR) | 2001-02-28 | — | — | EP | disclosed |
| US-6143466-A | Chemically amplified photoresist composition | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2000-11-07 | — | — | US | disclosed |
| US-5648196-A | Water-soluble photoinitiators | CORNELL RESEARCH FOUNDATION, INC. (US) | 1997-07-15 | — | — | US | disclosed |