SCHEMBL2527240

SCHEMBL2527240

C[Si](C)(C)O[Si](CCl)(O[Si](C)(C)C)O[Si](CCl)(O[Si](C)(C)C)O[Si](C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3849019 0.97
SCHEMBL1696050 0.71
SCHEMBL1538986 0.71
SCHEMBL2522520 0.71
SCHEMBL2527583 0.71
SCHEMBL1242740 0.71
SCHEMBL31375451 0.71
SCHEMBL3617414 0.69
SCHEMBL1257228 0.69 TSHR (0.30)
SCHEMBL5611243 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8039049-B2 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2011-10-18 US claimed
US-7405168-B2 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMITED (JP) 2008-07-29 US claimed
US-20080076262-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2008-03-27 US claimed
US-7345000-B2 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2008-03-18 US claimed
US-20070077782-A1 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US claimed
US-20070077353-A1 Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US claimed
US-20070077781-A1 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMTED (JP) 2007-04-05 US claimed
US-20050215072-A1 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2005-09-29 US claimed
US-12583178-B2 Systems and methods for stereolithography three-dimensional printing Southwest Greene International, Inc. (US) 2026-03-24 US disclosed
EP-4605227-A2 SYSTEMS AND METHODS FOR STEREOLITHOGRAPHY THREE-DIMENSIONAL PRINTING Southwest Greene International, Inc. (US) 2025-08-27 EP disclosed
WO-2024178383-A2 SYSTEMS AND METHODS FOR STEREOLITHOGRAPHY THREE-DIMENSIONAL PRINTING SOUTHWEST GREEN INTERNATIONAL, INC. (US) 2024-08-29 WO disclosed
US-20240140030-A1 SYSTEMS AND METHODS FOR STEREOLITHOGRAPHY THREE-DIMENSIONAL PRINTING Southwest Greene International, Inc. 2024-05-02 US disclosed
WO-2024086660-A2 SYSTEMS AND METHODS FOR STEREOLITHOGRAPHY THREE-DIMENSIONAL PRINTING HOLO, INC. (US) 2024-04-25 WO disclosed
EP-4326531-A1 SYSTEMS AND METHODS FOR STEREOLITHOGRAPHY THREE-DIMENSIONAL PRINTING Holo, Inc. (US) 2024-02-28 EP disclosed
US-7345000-B2 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2008-03-18 US disclosed
US-20070077782-A1 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US disclosed
US-20070077353-A1 Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US disclosed
US-20070077781-A1 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMTED (JP) 2007-04-05 US disclosed
US-20050215072-A1 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2005-09-29 US disclosed
US-5676745-A HEATING THE CERAMIC POWDER WITH AN ORGANOMETALLIC COMPOUND CHEMICAL INTERMEDIATE TO DECOMPOSE, FORMING A POROUS BODY THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE (US) 1997-10-14 US disclosed