SCHEMBL2531980

SCHEMBL2531980

CC(C)(C)[SiH2][SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18992181 0.67
SCHEMBL263958 0.59
SCHEMBL2531985 0.59
Hydrochloric Acid SCHEMBL1036860 0.56
SCHEMBL79834 0.56
Bromide SCHEMBL16193767 0.56
SCHEMBL16927200 0.56
SCHEMBL2530385 0.56
SCHEMBL707890 0.56
SCHEMBL706542 0.56

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 393 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170178899-A1 DIRECTIONAL DEPOSITION ON PATTERNED STRUCTURES LAM RESEARCH CORPORATION 2017-06-22 US claimed
US-8993460-B2 Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactants NOVELLUS SYSTEMS, INC. (US) 2015-03-31 US claimed
US-20140193983-A1 APPARATUSES AND METHODS FOR DEPOSITING SiC/SiCN FILMS VIA CROSS-METATHESIS REACTIONS WITH ORGANOMETALLIC CO-REACTANTS NOVELLUS SYSTEMS, INC. 2014-07-10 US claimed
US-12642026-B2 Nitrogen-containing aromatic or ring structure molecules for plasma etch and deposition AMERICAN AIR LIQUIDE, INC. (US) 2026-05-26 US disclosed
US-20260090294-A1 DOPED SILICON OR BORON LAYER FORMATION LAM RES CORP (US) 2026-03-26 US disclosed
US-20260090293-A1 SEMICONDUCTOR STACKS AND PROCESSES THEREOF LAM RES CORP (US) 2026-03-26 US disclosed
US-12588475-B2 High selectivity doped hardmask films LAM RESEARCH CORPORATION (US) 2026-03-24 US disclosed
US-20260047361-A1 METHOD AND APPARATUS FOR ATOMIC LAYER DEPOSITION USING MULTIPLE CHAMBERS NATIONAL TSING HUA UNIVERSITY (TW) 2026-02-12 US disclosed
US-20250385088-A1 BACKSIDE LAYER FOR A SEMICONDUCTOR SUBSTRATE LAM RES CORP (US) 2025-12-18 US disclosed
US-20250372367-A1 DEPOSITION AND ETCH OF SILICON-CONTAINING LAYER LAM RES CORP (US) 2025-12-04 US disclosed
EP-4651192-A2 UNDERLAYER FOR PHOTORESIST ADHESION AND DOSE REDUCTION Lam Research Corporation (US) 2025-11-19 EP disclosed
WO-2011130397-A2 IMPROVED SILICON NITRIDE FILMS AND METHODS NOVELLUS SYSTEMS, INC. (US) 2011-10-20 WO disclosed
EP-0630933-B1 A method of producing a semiconducting material NIPPON OIL CO LTD (JP) 1999-04-14 EP disclosed
US-5700400-A Method for producing a semiconducting material NIPPON OIL CO., LTD. (JP) 1997-12-23 US disclosed
EP-0551771-B1 Process for producing polysilanes NIPPON OIL CO LTD (JP) 1997-07-30 EP disclosed
US-5620531-A Photovoltaic element NIPPON OIL CO., LTD. (JP) 1997-04-15 US disclosed
EP-0717451-A2 Photovoltaic element NIPPON OIL CO., LTD. (JP) 1996-06-19 EP disclosed
EP-0630933-A2 A method of producing a semiconducting material NIPPON OIL CO. LTD. (JP) 1994-12-28 EP disclosed
US-5304622-A Process for producing polysilanes NIPPON OIL COMPANY, LTD. (JP) 1994-04-19 US disclosed
EP-0551771-A2 Process for producing polysilanes NIPPON OIL CO. LTD. (JP) 1993-07-21 EP disclosed