SCHEMBL2530385

SCHEMBL2530385

CC(C)(C)[SiH2]N

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tert-Butylamine SCHEMBL3980712 0.63
SCHEMBL2531985 0.59
SCHEMBL80359 0.59
SCHEMBL263958 0.59
SCHEMBL79834 0.56
SCHEMBL16927200 0.56
SCHEMBL2531980 0.56
Hydrochloric Acid SCHEMBL1036860 0.56
Bromide SCHEMBL16193767 0.56
SCHEMBL706542 0.56

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 377 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-113603604-B Preparation method of tert-butyl glycinate 博石丰生命科技(南通)有限公司 2023-07-21 CN claimed
US-20170178899-A1 DIRECTIONAL DEPOSITION ON PATTERNED STRUCTURES LAM RESEARCH CORPORATION 2017-06-22 US claimed
US-8993460-B2 Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactants NOVELLUS SYSTEMS, INC. (US) 2015-03-31 US claimed
US-20140193983-A1 APPARATUSES AND METHODS FOR DEPOSITING SiC/SiCN FILMS VIA CROSS-METATHESIS REACTIONS WITH ORGANOMETALLIC CO-REACTANTS NOVELLUS SYSTEMS, INC. 2014-07-10 US claimed
CN-101256949-B Strained SOI substrate manufacture method and meth CMOS device on the substrate IBM 2010-09-29 CN claimed
US-20260090293-A1 SEMICONDUCTOR STACKS AND PROCESSES THEREOF LAM RES CORP (US) 2026-03-26 US disclosed
US-20260090294-A1 DOPED SILICON OR BORON LAYER FORMATION LAM RES CORP (US) 2026-03-26 US disclosed
US-20260076110-A1 HYBRID ATOMIC LAYER DEPOSITION LAM RES CORP (US) 2026-03-12 US disclosed
US-20260047361-A1 METHOD AND APPARATUS FOR ATOMIC LAYER DEPOSITION USING MULTIPLE CHAMBERS NATIONAL TSING HUA UNIVERSITY (TW) 2026-02-12 US disclosed
US-20250385088-A1 BACKSIDE LAYER FOR A SEMICONDUCTOR SUBSTRATE LAM RES CORP (US) 2025-12-18 US disclosed
US-20250372367-A1 DEPOSITION AND ETCH OF SILICON-CONTAINING LAYER LAM RES CORP (US) 2025-12-04 US disclosed
EP-4651192-A2 UNDERLAYER FOR PHOTORESIST ADHESION AND DOSE REDUCTION Lam Research Corporation (US) 2025-11-19 EP disclosed
CN-1249095-C Catalyst for vinyl compound polymerization and process for producing vinyl polymer IDEMITSU PETROCHEMICAL CO (JP) 2006-04-05 CN disclosed
US-6737193-B2 ACTIVE MATERIALS IN THE POSITIVE ELECTRODES OF BATTERIES. NOVEL METHODS FOR PREPARING THE TETRAKETOPIPERAZINE UNIT-CONTAINING COMPOUNDS INCLUDE: (I) REACTING AN OXALYL HALIDE AND AN OXAMIDE, AND ADDING WATER OR AN AQUEOUS ALKALI IM&T RESEARCH, INC. 2004-05-18 US disclosed
CN-1127522-C Catalyst for olefin polymer production, process for producing the same, and process for producing olefin polymer IDEMITSU PETROCHEMCIAL CO LTD (JP) 2003-11-12 CN disclosed
US-20030148188-A1 Active materials in the positive electrodes of batteries. Novel methods for preparing the tetraketopiperazine unit-containing compounds include: (i) reacting an oxalyl halide and an oxamide, and adding water or an aqueous alkali IM&T RESEARCH, INC. 2003-08-07 US disclosed
CN-1416435-A Catalyst for vinyl compound polymerization and process for producing vinyl polymer IDEMITSU PETROCHEMICAL CO (JP) 2003-05-07 CN disclosed
CN-1327445-A Transition metal compounds, catalyst for the production of alpha-olefins and process therefor IDEMITSU PETROCHEMICAL CO (JP) 2001-12-19 CN disclosed
CN-1275134-A Catalyst for olefin polymer production, process for producing the same, and process for producing olefin polymer IDEMITSU PETROCHEMICAL CO (JP) 2000-11-29 CN disclosed
US-4107196-A SILYLATING AGENTS DOW CORNING CORPORATION (US) 1978-08-15 US disclosed