⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8385947 | 0.75 | — | — | |
| SCHEMBL8382186 | 0.69 | — | — | |
| SCHEMBL263958 | 0.62 | — | — | |
| SCHEMBL80359 | 0.62 | — | — | |
| SCHEMBL16927200 | 0.59 | — | — | |
| SCHEMBL2531980 | 0.59 | — | — | |
| Hydrochloric Acid SCHEMBL1036860 | 0.59 | — | — | |
| SCHEMBL79834 | 0.59 | — | — | |
| SCHEMBL707890 | 0.59 | — | — | |
| SCHEMBL2530385 | 0.59 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 375 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20170178899-A1 | DIRECTIONAL DEPOSITION ON PATTERNED STRUCTURES | LAM RESEARCH CORPORATION | 2017-06-22 | — | — | US | claimed |
| US-8993460-B2 | Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactants | NOVELLUS SYSTEMS, INC. (US) | 2015-03-31 | — | — | US | claimed |
| US-20140193983-A1 | APPARATUSES AND METHODS FOR DEPOSITING SiC/SiCN FILMS VIA CROSS-METATHESIS REACTIONS WITH ORGANOMETALLIC CO-REACTANTS | NOVELLUS SYSTEMS, INC. | 2014-07-10 | — | — | US | claimed |
| US-5837056-A | Method for growing III-V group compound semiconductor crystal | FUJITSU LIMITED (JP) | 1998-11-17 | — | — | US | claimed |
| US-5656076-A | USING SILICON DOPANT THAT INCLUDES A SILICON ATOM BONDED TO AN ALKYL AND A HYDROGEN | FUJITSU LIMITED (JP) | 1997-08-12 | — | — | US | claimed |
| US-12642026-B2 | Nitrogen-containing aromatic or ring structure molecules for plasma etch and deposition | AMERICAN AIR LIQUIDE, INC. (US) | 2026-05-26 | — | — | US | disclosed |
| US-20260090293-A1 | SEMICONDUCTOR STACKS AND PROCESSES THEREOF | LAM RES CORP (US) | 2026-03-26 | — | — | US | disclosed |
| US-20260090294-A1 | DOPED SILICON OR BORON LAYER FORMATION | LAM RES CORP (US) | 2026-03-26 | — | — | US | disclosed |
| US-12588475-B2 | High selectivity doped hardmask films | LAM RESEARCH CORPORATION (US) | 2026-03-24 | — | — | US | disclosed |
| US-20260047361-A1 | METHOD AND APPARATUS FOR ATOMIC LAYER DEPOSITION USING MULTIPLE CHAMBERS | NATIONAL TSING HUA UNIVERSITY (TW) | 2026-02-12 | — | — | US | disclosed |
| US-20250385088-A1 | BACKSIDE LAYER FOR A SEMICONDUCTOR SUBSTRATE | LAM RES CORP (US) | 2025-12-18 | — | — | US | disclosed |
| US-20250372367-A1 | DEPOSITION AND ETCH OF SILICON-CONTAINING LAYER | LAM RES CORP (US) | 2025-12-04 | — | — | US | disclosed |
| US-8592328-B2 | Method for depositing a chlorine-free conformal sin film | NOVELLUS SYSTEMS, INC. (US) | 2013-11-26 | — | — | US | disclosed |
| US-20130196516-A1 | METHODS FOR UV-ASSISTED CONFORMAL FILM DEPOSITION | LAVOIE ADRIEN (US) | 2013-08-01 | — | — | US | disclosed |
| US-20130189854-A1 | METHOD FOR DEPOSITING A CHLORINE-FREE CONFORMAL SIN FILM | NOVELLUS SYSTEMS, INC. | 2013-07-25 | — | — | US | disclosed |
| EP-2618365-A2 | Method for depositing a chlorine-free conformal SiN film | Novellus Systems, Inc. (US) | 2013-07-24 | — | — | EP | disclosed |
| WO-2011130397-A2 | IMPROVED SILICON NITRIDE FILMS AND METHODS | NOVELLUS SYSTEMS, INC. (US) | 2011-10-20 | — | — | WO | disclosed |
| US-20110256734-A1 | SILICON NITRIDE FILMS AND METHODS | NOVELLUS SYSTEMS, INC. | 2011-10-20 | — | — | US | disclosed |
| US-5837056-A | Method for growing III-V group compound semiconductor crystal | FUJITSU LIMITED (JP) | 1998-11-17 | — | — | US | disclosed |
| US-5656076-A | USING SILICON DOPANT THAT INCLUDES A SILICON ATOM BONDED TO AN ALKYL AND A HYDROGEN | FUJITSU LIMITED (JP) | 1997-08-12 | — | — | US | disclosed |